HNSC.L vs. 3190.HK

Last updated Jun 5, 2026

HNSC.L (HSBC Nasdaq Global Semiconductor UCITS ETF USD) and 3190.HK (Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF) are both exchange-traded funds - HNSC.L is a Semiconductors fund tracking the Nasdaq Global Semiconductor, while 3190.HK is a Dividend fund tracking the Hang Seng Shanghai-Shenzhen-Hong Kong (Selected Corporations) High Dividend Yield Index. Both are passively managed. Over the past 3 years, HNSC.L returned 62.69%/yr vs 26.03%/yr for 3190.HK. At a 0.19 correlation, their price movements are largely independent. HNSC.L charges 0.35%/yr vs 0.60%/yr for 3190.HK.

Performance

HNSC.L vs. 3190.HK - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF (3190.HK). The values are adjusted to include any dividend payments, if applicable.

Different Trading Currencies

HNSC.L is traded in USD, while 3190.HK is traded in HKD. To make them comparable, the 3190.HK values have been converted to USD using the latest available exchange rates.

Returns By Period

In the year-to-date period, HNSC.L achieves a 92.27% return, which is significantly higher than 3190.HK's 7.32% return.

HNSC.L

• 1D: -3.06%
• 1M: 20.19%
• YTD: 92.27%
• 6M: 94.54%
• 1Y: 191.57%
• 3Y*: 62.69%
• 5Y*: —
• 10Y*: —

3190.HK

• 1D: -1.06%
• 1M: -3.68%
• YTD: 7.32%
• 6M: 4.48%
• 1Y: 29.14%
• 3Y*: 26.03%
• 5Y*: —
• 10Y*: —

*Multi-year figures are annualized to reflect compound growth (CAGR)

HNSC.L vs. 3190.HK - Yearly Performance Comparison

	2026 (YTD)	2025	2024	2023	2022
HNSC.L HSBC Nasdaq Global Semiconductor UCITS ETF USD	92.27%	55.83%	17.71%	50.92%	8.90%
3190.HK Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF	7.32%	39.72%	35.44%	12.17%	-0.95%

Correlation

The correlation between HNSC.L and 3190.HK is 0.25, which is low. Their price movements are largely independent, making them effective diversification partners.

	Correlation
Correlation (1Y) Calculated over the trailing 1-year period	0.25
Correlation (3Y) Calculated over the trailing 3-year period	0.25
Correlation (All Time) Calculated using the full available price history since Jul 11, 2022	0.19

Return for Risk

HNSC.L vs. 3190.HK — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

HNSC.L

HNSC.L Risk / Return Rank: 97
HNSC.L Sharpe Ratio Rank: 98
HNSC.L Sortino Ratio Rank: 96
HNSC.L Omega Ratio Rank: 95
HNSC.L Calmar Ratio Rank: 98
HNSC.L Martin Ratio Rank: 97

3190.HK

3190.HK Risk / Return Rank: 66
3190.HK Sharpe Ratio Rank: 62
3190.HK Sortino Ratio Rank: 61
3190.HK Omega Ratio Rank: 60
3190.HK Calmar Ratio Rank: 82
3190.HK Martin Ratio Rank: 62

The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

HNSC.L vs. 3190.HK - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF (3190.HK). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

	HNSC.L	3190.HK	Difference
Sharpe ratio: Return per unit of total volatility	5.71	2.08	+3.64
Sortino ratio: Return per unit of downside risk	5.75	2.86	+2.89
Omega ratio: Gain probability vs. loss probability	1.73	1.36	+0.37
Calmar ratio: Return relative to maximum drawdown	12.69	4.26	+8.44
Martin ratio: Return relative to average drawdown	45.66	10.90	+34.76
Data is calculated on a 1-year rolling basis and updated daily. The trend shows the change in the indicator over the past month.

HNSC.L vs. 3190.HK - Sharpe Ratio Comparison

The current HNSC.L Sharpe Ratio is 5.71, which is higher than the 3190.HK Sharpe Ratio of 2.08. The chart below compares the historical Sharpe Ratios of HNSC.L and 3190.HK, calculated using daily returns over the previous 12 months. A higher Sharpe Ratio indicates better risk-adjusted performance relative to the risk-free rate.

Sharpe Ratios by Period

	HNSC.L	3190.HK	Difference
Sharpe Ratio (1Y) Calculated over the trailing 1-year period	5.71	2.08	+3.64
Sharpe Ratio (All Time) Calculated using the full available price history	1.61	1.27	+0.34

Drawdowns

HNSC.L vs. 3190.HK - Drawdown Comparison

The maximum HNSC.L drawdown since its inception was -39.32%, which is greater than 3190.HK's maximum drawdown of -17.31%. Use the drawdown chart below to compare losses from any high point for HNSC.L and 3190.HK.

Drawdown Indicators

	HNSC.L	3190.HK	Difference
Max Drawdown Largest peak-to-trough decline	-39.32%	-17.31%	-22.01%
Max Drawdown (1Y) Largest decline over 1 year	-14.99%	-7.03%	-7.96%
Max Drawdown (3Y) Largest decline over 3 years	-37.21%	-15.26%	-21.95%
Current Drawdown Current decline from peak	-3.06%	-4.41%	+1.35%
Average Drawdown Average peak-to-trough decline	-9.51%	-5.18%	-4.33%
Ulcer Index Depth and duration of drawdowns from previous peaks	4.18%	2.72%	+1.46%

Volatility

HNSC.L vs. 3190.HK - Volatility Comparison

HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) has a higher volatility of 14.26% compared to Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF (3190.HK) at 3.21%. This indicates that HNSC.L's price experiences larger fluctuations and is considered to be riskier than 3190.HK based on this measure. The chart below showcases a comparison of their rolling one-month volatility.

Volatility by Period

	HNSC.L	3190.HK	Difference
Volatility (1M) Calculated over the trailing 1-month period	14.26%	3.21%	+11.05%
Volatility (6M) Calculated over the trailing 6-month period	26.25%	10.13%	+16.12%
Volatility (1Y) Calculated over the trailing 1-year period	33.32%	14.41%	+18.91%
Volatility (5Y) Calculated over the trailing 5-year period, annualized	37.74%	18.77%	+18.97%
Volatility (10Y) Calculated over the trailing 10-year period, annualized	37.74%	18.77%	+18.97%

HNSC.L vs. 3190.HK - Expense Ratio Comparison

HNSC.L has a 0.35% expense ratio, which is lower than 3190.HK's 0.60% expense ratio.

Dividends

HNSC.L vs. 3190.HK - Dividend Comparison

HNSC.L has not paid dividends to shareholders, while 3190.HK's dividend yield for the trailing twelve months is around 6.02%.

Position	TTM	2025	2024	2023	2022
3190.HK Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF	6.02%	6.12%	6.82%	8.53%	3.11%
HNSC.L HSBC Nasdaq Global Semiconductor UCITS ETF USD	0.00%	0.00%	0.00%	0.00%	0.00%

Frequently Asked Questions

Can I hold both HNSC.L and 3190.HK in my portfolio?

HNSC.L and 3190.HK have a correlation of 0.25, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

Which ETF is better, HNSC.L or 3190.HK?

On fees, HNSC.L is cheaper at 0.35% per year. The better choice depends on whether you care most about return, fees, risk, or income.

Which ETF is cheaper, HNSC.L or 3190.HK?

HNSC.L is cheaper with a 0.35% expense ratio, compared with 0.60% for 3190.HK.

What is the main difference between HNSC.L and 3190.HK?

HNSC.L is categorized as Semiconductors, while 3190.HK is Dividend. HNSC.L tracks Nasdaq Global Semiconductor, while 3190.HK tracks Hang Seng Shanghai-Shenzhen-Hong Kong (Selected Corporations) High Dividend Yield Index. They also come from different issuers: HSBC and Fubon. Their fees differ too: 0.35% for HNSC.L and 0.60% for 3190.HK.