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HNSC.L vs. 3TSM.L
Performance
Return for Risk
Dividends
Drawdowns
Volatility

Performance

HNSC.L vs. 3TSM.L - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and Leverage Shares 3x Long Taiwan Semiconductor (TSM) ETP Securities (3TSM.L). The values are adjusted to include any dividend payments, if applicable.

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HNSC.L vs. 3TSM.L - Yearly Performance Comparison


2026 (YTD)2025202420232022
HNSC.L
HSBC Nasdaq Global Semiconductor UCITS ETF USD
7.30%55.83%17.71%50.92%-18.53%
3TSM.L
Leverage Shares 3x Long Taiwan Semiconductor (TSM) ETP Securities
10.57%60.55%288.94%90.51%-84.25%

Returns By Period

In the year-to-date period, HNSC.L achieves a 7.30% return, which is significantly lower than 3TSM.L's 10.57% return.


HNSC.L

1D
0.10%
1M
-11.74%
YTD
7.30%
6M
26.21%
1Y
92.99%
3Y*
37.65%
5Y*
10Y*

3TSM.L

1D
7.87%
1M
-37.09%
YTD
10.57%
6M
26.08%
1Y
337.57%
3Y*
96.02%
5Y*
10Y*
*Multi-year figures are annualized to reflect compound growth (CAGR)

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HNSC.L vs. 3TSM.L - Expense Ratio Comparison

HNSC.L has a 0.35% expense ratio, which is lower than 3TSM.L's 0.75% expense ratio.


Return for Risk

HNSC.L vs. 3TSM.L — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

HNSC.L
HNSC.L Risk / Return Rank: 9696
Overall Rank
HNSC.L Sharpe Ratio Rank: 9797
Sharpe Ratio Rank
HNSC.L Sortino Ratio Rank: 9696
Sortino Ratio Rank
HNSC.L Omega Ratio Rank: 9393
Omega Ratio Rank
HNSC.L Calmar Ratio Rank: 9898
Calmar Ratio Rank
HNSC.L Martin Ratio Rank: 9797
Martin Ratio Rank

3TSM.L
3TSM.L Risk / Return Rank: 9595
Overall Rank
3TSM.L Sharpe Ratio Rank: 9898
Sharpe Ratio Rank
3TSM.L Sortino Ratio Rank: 9494
Sortino Ratio Rank
3TSM.L Omega Ratio Rank: 8787
Omega Ratio Rank
3TSM.L Calmar Ratio Rank: 9898
Calmar Ratio Rank
3TSM.L Martin Ratio Rank: 9696
Martin Ratio Rank
The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

HNSC.L vs. 3TSM.L - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and Leverage Shares 3x Long Taiwan Semiconductor (TSM) ETP Securities (3TSM.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.


HNSC.L3TSM.LDifference

Sharpe ratio

Return per unit of total volatility

2.81

3.14

-0.33

Sortino ratio

Return per unit of downside risk

3.32

3.01

+0.32

Omega ratio

Gain probability vs. loss probability

1.43

1.36

+0.07

Calmar ratio

Return relative to maximum drawdown

5.74

6.49

-0.75

Martin ratio

Return relative to average drawdown

19.52

17.75

+1.76

HNSC.L vs. 3TSM.L - Sharpe Ratio Comparison

The current HNSC.L Sharpe Ratio is 2.81, which is comparable to the 3TSM.L Sharpe Ratio of 3.14. The chart below compares the historical Sharpe Ratios of HNSC.L and 3TSM.L, offering insights into how both investments have performed under varying market conditions. These values are calculated using daily returns over the previous 12 months.


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Sharpe Ratios by Period


HNSC.L3TSM.LDifference

Sharpe Ratio (1Y)

Calculated over the trailing 1-year period

2.81

3.14

-0.33

Sharpe Ratio (All Time)

Calculated using the full available price history

0.96

0.16

+0.79

Correlation

The correlation between HNSC.L and 3TSM.L is 0.61, which is considered to be moderate. This suggests that the two assets have some degree of positive relationship in their price movements. Moderate correlation can be acceptable for portfolio diversification, offering a balance between risk and potential returns.


Dividends

HNSC.L vs. 3TSM.L - Dividend Comparison

Neither HNSC.L nor 3TSM.L has paid dividends to shareholders.


Tickers have no history of dividend payments

Drawdowns

HNSC.L vs. 3TSM.L - Drawdown Comparison

The maximum HNSC.L drawdown since its inception was -39.32%, smaller than the maximum 3TSM.L drawdown of -93.59%. Use the drawdown chart below to compare losses from any high point for HNSC.L and 3TSM.L.


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Drawdown Indicators


HNSC.L3TSM.LDifference

Max Drawdown

Largest peak-to-trough decline

-39.32%

-93.59%

+54.27%

Max Drawdown (1Y)

Largest decline over 1 year

-15.57%

-46.56%

+30.99%

Current Drawdown

Current decline from peak

-14.91%

-42.36%

+27.45%

Average Drawdown

Average peak-to-trough decline

-9.96%

-57.40%

+47.44%

Ulcer Index

Depth and duration of drawdowns from previous peaks

4.58%

17.03%

-12.45%

Volatility

HNSC.L vs. 3TSM.L - Volatility Comparison

The current volatility for HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) is 10.31%, while Leverage Shares 3x Long Taiwan Semiconductor (TSM) ETP Securities (3TSM.L) has a volatility of 31.90%. This indicates that HNSC.L experiences smaller price fluctuations and is considered to be less risky than 3TSM.L based on this measure. The chart below showcases a comparison of their rolling one-month volatility.


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Volatility by Period


HNSC.L3TSM.LDifference

Volatility (1M)

Calculated over the trailing 1-month period

10.31%

31.90%

-21.59%

Volatility (6M)

Calculated over the trailing 6-month period

23.47%

74.07%

-50.60%

Volatility (1Y)

Calculated over the trailing 1-year period

32.98%

106.72%

-73.74%

Volatility (5Y)

Calculated over the trailing 5-year period, annualized

36.95%

113.58%

-76.63%

Volatility (10Y)

Calculated over the trailing 10-year period, annualized

36.95%

113.58%

-76.63%