HNSC.L vs. HNSS.L
Compare and contrast key facts about HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L).
HNSC.L and HNSS.L are both exchange-traded funds (ETFs), meaning they are traded on stock exchanges and can be bought and sold throughout the day. HNSC.L is a passively managed fund by HSBC that tracks the performance of the Nasdaq Global Semiconductor. It was launched on Jan 25, 2022. HNSS.L is a passively managed fund by HSBC that tracks the performance of the Nasdaq Global Semiconductor Index. It was launched on Jan 25, 2022. Both HNSC.L and HNSS.L are passive ETFs, meaning that they are not actively managed but aim to replicate the performance of the underlying index as closely as possible.
Performance
HNSC.L vs. HNSS.L - Performance Comparison
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HNSC.L vs. HNSS.L - Yearly Performance Comparison
| 2026 (YTD) | 2025 | 2024 | 2023 | 2022 | |
|---|---|---|---|---|---|
HNSC.L HSBC Nasdaq Global Semiconductor UCITS ETF USD | 14.72% | 55.83% | 17.71% | 50.92% | -18.53% |
HNSS.L HSBC Nasdaq Global Semiconductor UCITS ETF | 14.02% | 56.48% | 17.97% | 69.39% | -27.65% |
Different Trading Currencies
HNSC.L is traded in USD, while HNSS.L is traded in GBP. To make them comparable, the HNSS.L values have been converted to USD using the latest available exchange rates.
Returns By Period
The year-to-date returns for both stocks are quite close, with HNSC.L having a 14.72% return and HNSS.L slightly lower at 14.02%.
HNSC.L
- 1D
- 6.92%
- 1M
- -4.15%
- YTD
- 14.72%
- 6M
- 33.08%
- 1Y
- 102.53%
- 3Y*
- 40.75%
- 5Y*
- —
- 10Y*
- —
HNSS.L
- 1D
- 6.63%
- 1M
- -4.62%
- YTD
- 14.02%
- 6M
- 32.75%
- 1Y
- 101.89%
- 3Y*
- 40.83%
- 5Y*
- —
- 10Y*
- —
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HNSC.L vs. HNSS.L - Expense Ratio Comparison
Both HNSC.L and HNSS.L have an expense ratio of 0.35%.
Return for Risk
HNSC.L vs. HNSS.L — Risk / Return Rank
HNSC.L
HNSS.L
HNSC.L vs. HNSS.L - Risk-Adjusted Trends Comparison
This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.
| HNSC.L | HNSS.L | Difference | |
|---|---|---|---|
Sharpe ratioReturn per unit of total volatility | 3.04 | 3.04 | +0.01 |
Sortino ratioReturn per unit of downside risk | 3.56 | 3.54 | +0.02 |
Omega ratioGain probability vs. loss probability | 1.46 | 1.46 | 0.00 |
Calmar ratioReturn relative to maximum drawdown | 6.74 | 6.45 | +0.30 |
Martin ratioReturn relative to average drawdown | 24.37 | 23.98 | +0.39 |
Data is calculated on a 1-year rolling basis and updated daily. The trend shows the change in the indicator over the past month. | |||
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Sharpe Ratios by Period
| HNSC.L | HNSS.L | Difference | |
|---|---|---|---|
Sharpe Ratio (1Y)Calculated over the trailing 1-year period | 3.04 | 3.04 | +0.01 |
Sharpe Ratio (All Time)Calculated using the full available price history | 1.04 | 0.82 | +0.22 |
Correlation
The correlation between HNSC.L and HNSS.L is 0.74, which is considered to be high. That indicates a strong positive relationship between their price movements. Having highly-correlated positions in a portfolio may signal a lack of diversification, potentially leading to increased risk during market downturns.
Dividends
HNSC.L vs. HNSS.L - Dividend Comparison
Neither HNSC.L nor HNSS.L has paid dividends to shareholders.
Drawdowns
HNSC.L vs. HNSS.L - Drawdown Comparison
The maximum HNSC.L drawdown since its inception was -39.32%, roughly equal to the maximum HNSS.L drawdown of -41.16%. Use the drawdown chart below to compare losses from any high point for HNSC.L and HNSS.L.
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Drawdown Indicators
| HNSC.L | HNSS.L | Difference | |
|---|---|---|---|
Max DrawdownLargest peak-to-trough decline | -39.32% | -36.83% | -2.49% |
Max Drawdown (1Y)Largest decline over 1 year | -15.57% | -14.21% | -1.36% |
Current DrawdownCurrent decline from peak | -9.02% | -7.68% | -1.34% |
Average DrawdownAverage peak-to-trough decline | -9.96% | -9.88% | -0.08% |
Ulcer IndexDepth and duration of drawdowns from previous peaks | 4.15% | 3.85% | +0.30% |
Volatility
HNSC.L vs. HNSS.L - Volatility Comparison
HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) have volatilities of 11.66% and 11.25%, respectively, indicating that both stocks experience similar levels of price fluctuations. This suggests that the risk associated with both stocks, as measured by volatility, is nearly the same. The chart below showcases a comparison of their rolling one-month volatility.
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Volatility by Period
| HNSC.L | HNSS.L | Difference | |
|---|---|---|---|
Volatility (1M)Calculated over the trailing 1-month period | 11.66% | 11.25% | +0.41% |
Volatility (6M)Calculated over the trailing 6-month period | 24.16% | 23.99% | +0.17% |
Volatility (1Y)Calculated over the trailing 1-year period | 33.53% | 33.41% | +0.12% |
Volatility (5Y)Calculated over the trailing 5-year period, annualized | 37.14% | 31.28% | +5.86% |
Volatility (10Y)Calculated over the trailing 10-year period, annualized | 37.14% | 31.28% | +5.86% |