3190.HK vs. HNSC.L

Last updated Jun 5, 2026

3190.HK (Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF) and HNSC.L (HSBC Nasdaq Global Semiconductor UCITS ETF USD) are both exchange-traded funds - 3190.HK is a Dividend fund tracking the Hang Seng Shanghai-Shenzhen-Hong Kong (Selected Corporations) High Dividend Yield Index, while HNSC.L is a Semiconductors fund tracking the Nasdaq Global Semiconductor. Both are passively managed. Over the past 3 years, 3190.HK returned 25.98%/yr vs 62.66%/yr for HNSC.L. At a 0.19 correlation, their price movements are largely independent. 3190.HK charges 0.60%/yr vs 0.35%/yr for HNSC.L.

Performance

3190.HK vs. HNSC.L - Performance Comparison

The chart below illustrates the hypothetical performance of a HK$10,000 investment in Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF (3190.HK) and HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L). The values are adjusted to include any dividend payments, if applicable.

Different Trading Currencies

3190.HK is traded in HKD, while HNSC.L is traded in USD. To make them comparable, the HNSC.L values have been converted to HKD using the latest available exchange rates.

Returns By Period

In the year-to-date period, 3190.HK achieves a 7.99% return, which is significantly lower than HNSC.L's 93.51% return.

3190.HK

• 1D: -1.13%
• 1M: -3.75%
• YTD: 7.99%
• 6M: 5.12%
• 1Y: 28.91%
• 3Y*: 25.98%
• 5Y*: —
• 10Y*: —

HNSC.L

• 1D: -3.10%
• 1M: 20.15%
• YTD: 93.51%
• 6M: 95.81%
• 1Y: 191.07%
• 3Y*: 62.66%
• 5Y*: —
• 10Y*: —

*Multi-year figures are annualized to reflect compound growth (CAGR)

3190.HK vs. HNSC.L - Yearly Performance Comparison

	2026 (YTD)	2025	2024	2023	2022
3190.HK Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF	7.99%	39.96%	34.75%	12.15%	-1.45%
HNSC.L HSBC Nasdaq Global Semiconductor UCITS ETF USD	93.51%	56.13%	17.03%	51.67%	7.84%

Correlation

The correlation between 3190.HK and HNSC.L is 0.25, which is low. Their price movements are largely independent, making them effective diversification partners.

	Correlation
Correlation (1Y) Calculated over the trailing 1-year period	0.25
Correlation (3Y) Calculated over the trailing 3-year period	0.25
Correlation (All Time) Calculated using the full available price history since Jul 11, 2022	0.19

Return for Risk

3190.HK vs. HNSC.L — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

3190.HK

3190.HK Risk / Return Rank: 66
3190.HK Sharpe Ratio Rank: 62
3190.HK Sortino Ratio Rank: 61
3190.HK Omega Ratio Rank: 60
3190.HK Calmar Ratio Rank: 82
3190.HK Martin Ratio Rank: 62

HNSC.L

HNSC.L Risk / Return Rank: 97
HNSC.L Sharpe Ratio Rank: 98
HNSC.L Sortino Ratio Rank: 96
HNSC.L Omega Ratio Rank: 95
HNSC.L Calmar Ratio Rank: 98
HNSC.L Martin Ratio Rank: 97

The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

3190.HK vs. HNSC.L - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF (3190.HK) and HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

	3190.HK	HNSC.L	Difference
Sharpe ratio: Return per unit of total volatility	2.06	5.70	-3.64
Sortino ratio: Return per unit of downside risk	2.84	5.74	-2.90
Omega ratio: Gain probability vs. loss probability	1.36	1.73	-0.37
Calmar ratio: Return relative to maximum drawdown	4.29	12.81	-8.51
Martin ratio: Return relative to average drawdown	10.95	45.67	-34.72
Data is calculated on a 1-year rolling basis and updated daily. The trend shows the change in the indicator over the past month.

3190.HK vs. HNSC.L - Sharpe Ratio Comparison

The current 3190.HK Sharpe Ratio is 2.06, which is lower than the HNSC.L Sharpe Ratio of 5.70. The chart below compares the historical Sharpe Ratios of 3190.HK and HNSC.L, calculated using daily returns over the previous 12 months. A higher Sharpe Ratio indicates better risk-adjusted performance relative to the risk-free rate.

Sharpe Ratios by Period

	3190.HK	HNSC.L	Difference
Sharpe Ratio (1Y) Calculated over the trailing 1-year period	2.06	5.70	-3.64
Sharpe Ratio (All Time) Calculated using the full available price history	1.27	1.62	-0.35

Drawdowns

3190.HK vs. HNSC.L - Drawdown Comparison

The maximum 3190.HK drawdown since its inception was -17.31%, smaller than the maximum HNSC.L drawdown of -38.94%. Use the drawdown chart below to compare losses from any high point for 3190.HK and HNSC.L.

Drawdown Indicators

	3190.HK	HNSC.L	Difference
Max Drawdown Largest peak-to-trough decline	-17.31%	-38.94%	+21.63%
Max Drawdown (1Y) Largest decline over 1 year	-6.92%	-14.82%	+7.90%
Max Drawdown (3Y) Largest decline over 3 years	-15.08%	-37.56%	+22.48%
Current Drawdown Current decline from peak	-4.49%	-3.10%	-1.39%
Average Drawdown Average peak-to-trough decline	-5.26%	-9.50%	+4.24%
Ulcer Index Depth and duration of drawdowns from previous peaks	2.68%	4.17%	-1.49%

Volatility

3190.HK vs. HNSC.L - Volatility Comparison

The current volatility for Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF (3190.HK) is 3.28%, while HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) has a volatility of 14.26%. This indicates that 3190.HK experiences smaller price fluctuations and is considered to be less risky than HNSC.L based on this measure. The chart below showcases a comparison of their rolling one-month volatility.

Volatility by Period

	3190.HK	HNSC.L	Difference
Volatility (1M) Calculated over the trailing 1-month period	3.28%	14.26%	-10.98%
Volatility (6M) Calculated over the trailing 6-month period	10.14%	26.27%	-16.13%
Volatility (1Y) Calculated over the trailing 1-year period	14.42%	33.34%	-18.92%
Volatility (5Y) Calculated over the trailing 5-year period, annualized	18.71%	37.66%	-18.95%
Volatility (10Y) Calculated over the trailing 10-year period, annualized	18.71%	37.66%	-18.95%

3190.HK vs. HNSC.L - Expense Ratio Comparison

3190.HK has a 0.60% expense ratio, which is higher than HNSC.L's 0.35% expense ratio.

Dividends

3190.HK vs. HNSC.L - Dividend Comparison

3190.HK's dividend yield for the trailing twelve months is around 6.02%, while HNSC.L has not paid dividends to shareholders.

Position	TTM	2025	2024	2023	2022
3190.HK Fubon Shanghai-Shenzhen-Hong Kong High Dividend Yield ETF	6.02%	6.12%	6.82%	8.53%	3.11%
HNSC.L HSBC Nasdaq Global Semiconductor UCITS ETF USD	0.00%	0.00%	0.00%	0.00%	0.00%

Frequently Asked Questions

Can I hold both 3190.HK and HNSC.L in my portfolio?

3190.HK and HNSC.L have a correlation of 0.25, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

Which ETF is better, 3190.HK or HNSC.L?

On fees, HNSC.L is cheaper at 0.35% per year. The better choice depends on whether you care most about return, fees, risk, or income.

Which ETF is cheaper, 3190.HK or HNSC.L?

HNSC.L is cheaper with a 0.35% expense ratio, compared with 0.60% for 3190.HK.

What is the main difference between 3190.HK and HNSC.L?

3190.HK is categorized as Dividend, while HNSC.L is Semiconductors. 3190.HK tracks Hang Seng Shanghai-Shenzhen-Hong Kong (Selected Corporations) High Dividend Yield Index, while HNSC.L tracks Nasdaq Global Semiconductor. They also come from different issuers: Fubon and HSBC. Their fees differ too: 0.60% for 3190.HK and 0.35% for HNSC.L.