HNSS.L vs. VOO

Last updated Jun 13, 2026

HNSS.L (HSBC Nasdaq Global Semiconductor UCITS ETF) and VOO (Vanguard S&P 500 ETF) are both exchange-traded funds - HNSS.L is a Semiconductors fund tracking the Nasdaq Global Semiconductor Index, while VOO is a S&P 500 fund tracking the S&P 500 Index. Both are passively managed. Over the past 3 years, HNSS.L returned 54.01%/yr vs 18.51%/yr for VOO. A 0.53 correlation means they provide meaningful diversification when combined. HNSS.L charges 0.35%/yr vs 0.03%/yr for VOO.

Performance

HNSS.L vs. VOO - Performance Comparison

The chart below illustrates the hypothetical performance of a £10,000 investment in HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) and Vanguard S&P 500 ETF (VOO). The values are adjusted to include any dividend payments, if applicable.

Different Trading Currencies

HNSS.L is traded in GBP, while VOO is traded in USD. To make them comparable, the VOO values have been converted to GBP using the latest available exchange rates.

Returns By Period

In the year-to-date period, HNSS.L achieves a 84.37% return, which is significantly higher than VOO's 9.64% return.

HNSS.L

• 1D: 0.00%
• 1M: 5.02%
• YTD: 84.37%
• 6M: 88.21%
• 1Y: 173.28%
• 3Y*: 54.01%
• 5Y*: —
• 10Y*: —

VOO

• 1D: 0.64%
• 1M: 0.81%
• YTD: 9.64%
• 6M: 9.17%
• 1Y: 26.33%
• 3Y*: 18.51%
• 5Y*: 14.60%
• 10Y*: 16.09%

*Multi-year figures are annualized to reflect compound growth (CAGR)

HNSS.L vs. VOO - Yearly Performance Comparison

	2026 (YTD)	2025	2024	2023	2022
HNSS.L HSBC Nasdaq Global Semiconductor UCITS ETF	84.37%	45.50%	19.96%	32.89%	-25.65%
VOO Vanguard S&P 500 ETF	9.64%	9.43%	27.16%	20.01%	-1.49%

Correlation

The correlation between HNSS.L and VOO is 0.48, which is low. Their price movements are largely independent, making them effective diversification partners.

	Correlation
Correlation (1Y) Calculated over the trailing 1-year period	0.48
Correlation (3Y) Calculated over the trailing 3-year period	0.47
Correlation (All Time) Calculated using the full available price history since Jan 25, 2022	0.53

The correlation between HNSS.L and VOO has been stable across timeframes, ranging from 0.47 to 0.53 - a consistent structural relationship.

Return for Risk

HNSS.L vs. VOO — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

HNSS.L

HNSS.L Risk / Return Rank: 91
HNSS.L Sharpe Ratio Rank: 94
HNSS.L Sortino Ratio Rank: 90
HNSS.L Omega Ratio Rank: 95
HNSS.L Calmar Ratio Rank: 93
HNSS.L Martin Ratio Rank: 83

VOO

VOO Risk / Return Rank: 70
VOO Sharpe Ratio Rank: 71
VOO Sortino Ratio Rank: 69
VOO Omega Ratio Rank: 71
VOO Calmar Ratio Rank: 63
VOO Martin Ratio Rank: 76

The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

HNSS.L vs. VOO - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) and Vanguard S&P 500 ETF (VOO). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

Values are calculated on a 1-year rolling basis and updated daily. Risk-adjusted metrics are more stable over longer periods — use the period switch above to explore them.

	HNSS.L	VOO	Difference
Sharpe ratio: Return per unit of total volatility	3.14	2.26	+0.88
Sortino ratio: Return per unit of downside risk	3.70	2.91	+0.79
Omega ratio: Gain probability vs. loss probability	1.64	1.42	+0.22
Calmar ratio: Return relative to maximum drawdown	5.70	3.45	+2.25
Martin ratio: Return relative to average drawdown	14.75	13.03	+1.72

HNSS.L vs. VOO - Sharpe Ratio Comparison

The current HNSS.L Sharpe Ratio is 3.14, which is higher than the VOO Sharpe Ratio of 2.26. The chart below compares the historical Sharpe Ratios of HNSS.L and VOO, calculated using daily returns over the previous 12 months. A higher Sharpe Ratio indicates better risk-adjusted performance relative to the risk-free rate.

Drawdowns

HNSS.L vs. VOO - Drawdown Comparison

The maximum HNSS.L drawdown since its inception was -41.32%, which is greater than VOO's maximum drawdown of -26.09%. Use the drawdown chart below to compare losses from any high point for HNSS.L and VOO.

Drawdown Indicators

	HNSS.L	VOO	Difference
Max Drawdown Largest peak-to-trough decline	-41.32%	-26.09%	-15.23%
Max Drawdown (1Y) Largest decline over 1 year	-29.74%	-7.66%	-22.08%
Max Drawdown (3Y) Largest decline over 3 years	-36.83%	-21.93%	-14.90%
Max Drawdown (5Y) Largest decline over 5 years	—	-21.93%	—
Max Drawdown (10Y) Largest decline over 10 years	—	-26.09%	—
Current Drawdown Current decline from peak	-6.42%	-1.89%	-4.53%
Average Drawdown Average peak-to-trough decline	-16.47%	-3.29%	-13.18%
Ulcer Index Depth and duration of drawdowns from previous peaks	11.50%	2.03%	+9.47%

Volatility

HNSS.L vs. VOO - Volatility Comparison

HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) has a higher volatility of 13.65% compared to Vanguard S&P 500 ETF (VOO) at 3.95%. This indicates that HNSS.L's price experiences larger fluctuations and is considered to be riskier than VOO based on this measure. The chart below showcases a comparison of their rolling one-month volatility.

Volatility by Period

	HNSS.L	VOO	Difference
Volatility (1M) Calculated over the trailing 1-month period	13.65%	3.95%	+9.70%
Volatility (6M) Calculated over the trailing 6-month period	26.17%	8.66%	+17.51%
Volatility (1Y) Calculated over the trailing 1-year period	54.01%	11.70%	+42.31%
Volatility (5Y) Calculated over the trailing 5-year period, annualized	38.29%	15.82%	+22.47%
Volatility (10Y) Calculated over the trailing 10-year period, annualized	38.29%	18.12%	+20.17%

HNSS.L vs. VOO - Expense Ratio Comparison

HNSS.L has a 0.35% expense ratio, which is higher than VOO's 0.03% expense ratio.

Dividends

HNSS.L vs. VOO - Dividend Comparison

HNSS.L has not paid dividends to shareholders, while VOO's dividend yield for the trailing twelve months is around 1.05%.

Position	TTM	2025	2024	2023	2022	2021	2020	2019	2018	2017	2016	2015
HNSS.L HSBC Nasdaq Global Semiconductor UCITS ETF	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%
VOO Vanguard S&P 500 ETF	1.05%	1.13%	1.24%	1.46%	1.69%	1.25%	1.54%	1.88%	2.06%	1.78%	2.02%	2.10%

Frequently Asked Questions

Can I hold both HNSS.L and VOO in my portfolio?

HNSS.L and VOO have a correlation of 0.48, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

Which ETF is better, HNSS.L or VOO?

On fees, VOO is cheaper at 0.03% per year. The better choice depends on whether you care most about return, fees, risk, or income.

Which ETF is cheaper, HNSS.L or VOO?

VOO is cheaper with a 0.03% expense ratio, compared with 0.35% for HNSS.L.

What is the main difference between HNSS.L and VOO?

HNSS.L is categorized as Semiconductors, while VOO is S&P 500. HNSS.L tracks Nasdaq Global Semiconductor Index, while VOO tracks S&P 500 Index. They also come from different issuers: HSBC and Vanguard. Their fees differ too: 0.35% for HNSS.L and 0.03% for VOO.