HNSS.L vs. SEC0.DE
Compare and contrast key facts about HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) and iShares MSCI Global Semiconductors UCITS ETF USD (Acc) (SEC0.DE).
HNSS.L and SEC0.DE are both exchange-traded funds (ETFs), meaning they are traded on stock exchanges and can be bought and sold throughout the day. HNSS.L is a passively managed fund by HSBC that tracks the performance of the MSCI World/Information Tech NR USD. It was launched on Jan 25, 2022. SEC0.DE is a passively managed fund by iShares that tracks the performance of the MSCI ACWI IMI Semiconductors & Semiconductor Equipment ESG Screened Select Capped. It was launched on Aug 5, 2021. Both HNSS.L and SEC0.DE are passive ETFs, meaning that they are not actively managed but aim to replicate the performance of the underlying index as closely as possible.
Scroll down to visually compare performance, riskiness, drawdowns, and other indicators and decide which better suits your portfolio: HNSS.L or SEC0.DE.
Key characteristics
HNSS.L | SEC0.DE | |
---|---|---|
YTD Return | 18.60% | 20.56% |
1Y Return | 33.73% | 36.96% |
Sharpe Ratio | 0.66 | 1.22 |
Sortino Ratio | 1.27 | 1.68 |
Omega Ratio | 1.23 | 1.23 |
Calmar Ratio | 1.23 | 1.34 |
Martin Ratio | 2.76 | 3.37 |
Ulcer Index | 11.53% | 10.04% |
Daily Std Dev | 47.99% | 27.56% |
Max Drawdown | -29.74% | -36.91% |
Current Drawdown | -22.03% | -14.18% |
Correlation
The correlation between HNSS.L and SEC0.DE is 0.95, which is considered to be high. That indicates a strong positive relationship between their price movements. Having highly-correlated positions in a portfolio may signal a lack of diversification, potentially leading to increased risk during market downturns.
Performance
HNSS.L vs. SEC0.DE - Performance Comparison
In the year-to-date period, HNSS.L achieves a 18.60% return, which is significantly lower than SEC0.DE's 20.56% return. The chart below displays the growth of a $10,000 investment in both assets, with all prices adjusted for splits and dividends.
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HNSS.L vs. SEC0.DE - Expense Ratio Comparison
Both HNSS.L and SEC0.DE have an expense ratio of 0.35%.
Risk-Adjusted Performance
HNSS.L vs. SEC0.DE - Risk-Adjusted Performance Comparison
This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) and iShares MSCI Global Semiconductors UCITS ETF USD (Acc) (SEC0.DE). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.
Dividends
HNSS.L vs. SEC0.DE - Dividend Comparison
Neither HNSS.L nor SEC0.DE has paid dividends to shareholders.
Drawdowns
HNSS.L vs. SEC0.DE - Drawdown Comparison
The maximum HNSS.L drawdown since its inception was -29.74%, smaller than the maximum SEC0.DE drawdown of -36.91%. Use the drawdown chart below to compare losses from any high point for HNSS.L and SEC0.DE. For additional features, visit the drawdowns tool.
Volatility
HNSS.L vs. SEC0.DE - Volatility Comparison
HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) has a higher volatility of 7.71% compared to iShares MSCI Global Semiconductors UCITS ETF USD (Acc) (SEC0.DE) at 7.30%. This indicates that HNSS.L's price experiences larger fluctuations and is considered to be riskier than SEC0.DE based on this measure. The chart below showcases a comparison of their rolling one-month volatility.