SOXQ vs. DRAM

Last updated Jun 24, 2026

SOXQ (Invesco PHLX Semiconductor ETF) and DRAM (Roundhill Memory ETF) are both exchange-traded funds - SOXQ is a Semiconductors fund tracking the PHLX Semiconductor Sector Index, while DRAM is a Technology Equities fund actively managed by Roundhill. SOXQ is passively managed, while DRAM is actively managed. A 0.77 correlation means they provide meaningful diversification when combined. SOXQ charges 0.19%/yr vs 0.65%/yr for DRAM.

Performance

SOXQ vs. DRAM - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in Invesco PHLX Semiconductor ETF (SOXQ) and Roundhill Memory ETF (DRAM). The values are adjusted to include any dividend payments, if applicable.

Returns By Period

SOXQ

• 1D: -7.82%
• 1M: 10.55%
• YTD: 90.62%
• 6M: 87.99%
• 1Y: 158.27%
• 3Y*: 57.61%
• 5Y*: 34.04%
• 10Y*: —

DRAM

• 1D: -14.25%
• 1M: 31.05%
• YTD: —
• 6M: —
• 1Y: —
• 3Y*: —
• 5Y*: —
• 10Y*: —

*Multi-year figures are annualized to reflect compound growth (CAGR)

SOXQ vs. DRAM - Yearly Performance Comparison

	2026 (YTD)
SOXQ Invesco PHLX Semiconductor ETF	72.88%
DRAM Roundhill Memory ETF	156.37%

Correlation

The correlation between SOXQ and DRAM is 0.77, which is moderate. They share some common price drivers but move independently often enough to provide real diversification benefit when combined.

	Correlation
Correlation (All Time) Calculated using the full available price history since Apr 2, 2026	0.77

SOXQ vs. DRAM - Sectors Allocation Comparison

Sectors	SOXQ	DRAM
Technology	100.0%	100.0%
Financial Services	0.1%	-
Basic Materials	-	-
Communication Services	-	-
Consumer Cyclical	-	-
Consumer Defensive	-	-
Energy	-	-
Healthcare	-	-
Industrials	-	-
Real Estate	-	-
Utilities	-	-

Return for Risk

SOXQ vs. DRAM — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

SOXQ

SOXQ Risk / Return Rank: 94
SOXQ Sharpe Ratio Rank: 96
SOXQ Sortino Ratio Rank: 90
SOXQ Omega Ratio Rank: 92
SOXQ Calmar Ratio Rank: 97
SOXQ Martin Ratio Rank: 96

DRAM

Risk / return metrics aren't available yet — we need at least 12 months of trading data to calculate them.

The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

SOXQ vs. DRAM - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for Invesco PHLX Semiconductor ETF (SOXQ) and Roundhill Memory ETF (DRAM). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

Values are calculated on a 1-year rolling basis and updated daily. Risk-adjusted metrics are more stable over longer periods — use the period switch above to explore them.

	SOXQ	DRAM	Difference
Sharpe ratio: Return per unit of total volatility	4.11	—	—
Sortino ratio: Return per unit of downside risk	4.02	—	—
Omega ratio: Gain probability vs. loss probability	1.58	—	—
Calmar ratio: Return relative to maximum drawdown	10.22	—	—
Martin ratio: Return relative to average drawdown	36.68	—	—

Drawdowns

SOXQ vs. DRAM - Drawdown Comparison

The maximum SOXQ drawdown since its inception was -46.01%, which is greater than DRAM's maximum drawdown of -19.97%. Use the drawdown chart below to compare losses from any high point for SOXQ and DRAM.

Drawdown Indicators

	SOXQ	DRAM	Difference
Max Drawdown Largest peak-to-trough decline	-46.01%	-19.97%	-26.04%
Max Drawdown (1Y) Largest decline over 1 year	-15.59%	—	—
Max Drawdown (3Y) Largest decline over 3 years	-39.36%	—	—
Max Drawdown (5Y) Largest decline over 5 years	-46.01%	—	—
Current Drawdown Current decline from peak	-7.82%	-14.25%	+6.43%
Average Drawdown Average peak-to-trough decline	-12.87%	-3.09%	-9.78%
Ulcer Index Depth and duration of drawdowns from previous peaks	4.33%	—	—

Volatility

Volatility by Period

	SOXQ	DRAM	Difference
Volatility (1M) Calculated over the trailing 1-month period	22.04%	—	—
Volatility (6M) Calculated over the trailing 6-month period	32.49%	—	—
Volatility (1Y) Calculated over the trailing 1-year period	38.78%	93.22%	-54.44%
Volatility (5Y) Calculated over the trailing 5-year period, annualized	37.34%	93.22%	-55.88%
Volatility (10Y) Calculated over the trailing 10-year period, annualized	37.24%	93.22%	-55.98%

SOXQ vs. DRAM - Expense Ratio Comparison

SOXQ has a 0.19% expense ratio, which is lower than DRAM's 0.65% expense ratio.

Dividends

SOXQ vs. DRAM - Dividend Comparison

SOXQ's dividend yield for the trailing twelve months is around 0.27%, while DRAM has not paid dividends to shareholders.

Position	TTM	2025	2024	2023	2022	2021
DRAM Roundhill Memory ETF	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%
SOXQ Invesco PHLX Semiconductor ETF	0.27%	0.50%	0.68%	0.87%	1.36%	0.72%

Frequently Asked Questions

Can I hold both SOXQ and DRAM in my portfolio?

SOXQ and DRAM have a correlation of 0.77, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

Which ETF is better, SOXQ or DRAM?

On fees, SOXQ is cheaper at 0.19% per year. The better choice depends on whether you care most about return, fees, risk, or income.

Which ETF is cheaper, SOXQ or DRAM?

SOXQ is cheaper with a 0.19% expense ratio, compared with 0.65% for DRAM.

Which ETF pays a higher dividend yield, SOXQ or DRAM?

SOXQ has the higher dividend yield at 0.27%, compared with 0.00% for DRAM.

What is the main difference between SOXQ and DRAM?

SOXQ is categorized as Semiconductors, while DRAM is Technology Equities. They also come from different issuers: Invesco and Roundhill. Their fees differ too: 0.19% for SOXQ and 0.65% for DRAM.