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IUS vs. SOXQ
Performance
Return for Risk
Dividends
Drawdowns
Volatility

Performance

IUS vs. SOXQ - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in Invesco RAFI Strategic US ETF (IUS) and Invesco PHLX Semiconductor ETF (SOXQ). The values are adjusted to include any dividend payments, if applicable.

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IUS vs. SOXQ - Yearly Performance Comparison


2026 (YTD)20252024202320222021
IUS
Invesco RAFI Strategic US ETF
2.11%16.94%16.51%20.79%-8.34%8.53%
SOXQ
Invesco PHLX Semiconductor ETF
10.26%43.11%20.16%66.74%-35.59%24.82%

Returns By Period

In the year-to-date period, IUS achieves a 2.11% return, which is significantly lower than SOXQ's 10.26% return.


IUS

1D
0.41%
1M
-3.67%
YTD
2.11%
6M
5.62%
1Y
19.49%
3Y*
16.83%
5Y*
12.35%
10Y*

SOXQ

1D
2.88%
1M
-4.05%
YTD
10.26%
6M
20.31%
1Y
83.12%
3Y*
35.09%
5Y*
10Y*
*Multi-year figures are annualized to reflect compound growth (CAGR)

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IUS vs. SOXQ - Expense Ratio Comparison

Both IUS and SOXQ have an expense ratio of 0.19%, making them cost-effective options compared to the broader market, where average expense ratios typically range from 0.3% to 0.9%.


Return for Risk

IUS vs. SOXQ — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

IUS
IUS Risk / Return Rank: 6969
Overall Rank
IUS Sharpe Ratio Rank: 6666
Sharpe Ratio Rank
IUS Sortino Ratio Rank: 6969
Sortino Ratio Rank
IUS Omega Ratio Rank: 7272
Omega Ratio Rank
IUS Calmar Ratio Rank: 6262
Calmar Ratio Rank
IUS Martin Ratio Rank: 7474
Martin Ratio Rank

SOXQ
SOXQ Risk / Return Rank: 9393
Overall Rank
SOXQ Sharpe Ratio Rank: 9191
Sharpe Ratio Rank
SOXQ Sortino Ratio Rank: 9191
Sortino Ratio Rank
SOXQ Omega Ratio Rank: 8989
Omega Ratio Rank
SOXQ Calmar Ratio Rank: 9797
Calmar Ratio Rank
SOXQ Martin Ratio Rank: 9696
Martin Ratio Rank
The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

IUS vs. SOXQ - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for Invesco RAFI Strategic US ETF (IUS) and Invesco PHLX Semiconductor ETF (SOXQ). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.


IUSSOXQDifference

Sharpe ratio

Return per unit of total volatility

1.22

2.08

-0.86

Sortino ratio

Return per unit of downside risk

1.78

2.68

-0.90

Omega ratio

Gain probability vs. loss probability

1.27

1.38

-0.11

Calmar ratio

Return relative to maximum drawdown

1.65

4.79

-3.14

Martin ratio

Return relative to average drawdown

8.19

17.49

-9.31

IUS vs. SOXQ - Sharpe Ratio Comparison

The current IUS Sharpe Ratio is 1.22, which is lower than the SOXQ Sharpe Ratio of 2.08. The chart below compares the historical Sharpe Ratios of IUS and SOXQ, offering insights into how both investments have performed under varying market conditions. These values are calculated using daily returns over the previous 12 months.


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Sharpe Ratios by Period


IUSSOXQDifference

Sharpe Ratio (1Y)

Calculated over the trailing 1-year period

1.22

2.08

-0.86

Sharpe Ratio (5Y)

Calculated over the trailing 5-year period

0.82

Sharpe Ratio (All Time)

Calculated using the full available price history

0.76

0.60

+0.16

Correlation

The correlation between IUS and SOXQ is 0.69, which is considered to be moderate. This suggests that the two assets have some degree of positive relationship in their price movements. Moderate correlation can be acceptable for portfolio diversification, offering a balance between risk and potential returns.


Dividends

IUS vs. SOXQ - Dividend Comparison

IUS's dividend yield for the trailing twelve months is around 1.45%, more than SOXQ's 0.46% yield.


TTM20252024202320222021202020192018
IUS
Invesco RAFI Strategic US ETF
1.45%1.48%1.52%1.72%1.78%1.46%1.74%1.77%0.73%
SOXQ
Invesco PHLX Semiconductor ETF
0.46%0.50%0.68%0.87%1.36%0.72%0.00%0.00%0.00%

Drawdowns

IUS vs. SOXQ - Drawdown Comparison

The maximum IUS drawdown since its inception was -34.67%, smaller than the maximum SOXQ drawdown of -46.01%. Use the drawdown chart below to compare losses from any high point for IUS and SOXQ.


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Drawdown Indicators


IUSSOXQDifference

Max Drawdown

Largest peak-to-trough decline

-34.67%

-46.01%

+11.34%

Max Drawdown (1Y)

Largest decline over 1 year

-11.91%

-17.44%

+5.53%

Max Drawdown (5Y)

Largest decline over 5 years

-18.72%

Current Drawdown

Current decline from peak

-3.83%

-7.78%

+3.95%

Average Drawdown

Average peak-to-trough decline

-3.94%

-13.37%

+9.43%

Ulcer Index

Depth and duration of drawdowns from previous peaks

2.40%

4.78%

-2.38%

Volatility

IUS vs. SOXQ - Volatility Comparison

The current volatility for Invesco RAFI Strategic US ETF (IUS) is 4.00%, while Invesco PHLX Semiconductor ETF (SOXQ) has a volatility of 12.69%. This indicates that IUS experiences smaller price fluctuations and is considered to be less risky than SOXQ based on this measure. The chart below showcases a comparison of their rolling one-month volatility.


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Volatility by Period


IUSSOXQDifference

Volatility (1M)

Calculated over the trailing 1-month period

4.00%

12.69%

-8.69%

Volatility (6M)

Calculated over the trailing 6-month period

8.09%

26.33%

-18.24%

Volatility (1Y)

Calculated over the trailing 1-year period

16.06%

40.14%

-24.08%

Volatility (5Y)

Calculated over the trailing 5-year period, annualized

15.09%

36.10%

-21.01%

Volatility (10Y)

Calculated over the trailing 10-year period, annualized

18.18%

36.10%

-17.92%