PortfoliosLab logoPortfoliosLab logo
HNSS.L vs. URTH
Performance
Return for Risk
Drawdowns
Volatility
Dividends

Performance

HNSS.L vs. URTH - Performance Comparison

The chart below illustrates the hypothetical performance of a £10,000 investment in HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) and iShares MSCI World ETF (URTH). The values are adjusted to include any dividend payments, if applicable.

Loading charts...

Different Trading Currencies

HNSS.L is traded in GBP, while URTH is traded in USD. To make them comparable, the URTH values have been converted to GBP using the latest available exchange rates.

Returns By Period

In the year-to-date period, HNSS.L achieves a 84.37% return, which is significantly higher than URTH's 9.47% return.


HNSS.L

1D
0.00%
1M
5.02%
YTD
84.37%
6M
88.21%
1Y
173.28%
3Y*
54.01%
5Y*
10Y*

URTH

1D
0.47%
1M
1.22%
YTD
9.47%
6M
9.33%
1Y
25.05%
3Y*
17.19%
5Y*
12.61%
10Y*
13.96%
*Multi-year figures are annualized to reflect compound growth (CAGR)

HNSS.L vs. URTH - Yearly Performance Comparison


2026 (YTD)2025202420232022
HNSS.L
HSBC Nasdaq Global Semiconductor UCITS ETF
84.37%45.50%19.96%32.89%-25.65%
URTH
iShares MSCI World ETF
9.47%12.71%20.73%17.75%-1.83%

Correlation

The correlation between HNSS.L and URTH is 0.49, which is low. Their price movements are largely independent, making them effective diversification partners.


Correlation
Correlation (1Y)
Calculated over the trailing 1-year period

0.49

Correlation (3Y)
Calculated over the trailing 3-year period

0.48

Correlation (All Time)
Calculated using the full available price history since Jan 25, 2022

0.55

The correlation between HNSS.L and URTH has been stable across timeframes, ranging from 0.48 to 0.55 - a consistent structural relationship.

Compare stocks, funds, or ETFs

Search for stocks, ETFs, and funds for a quick comparison or use the comparison tool for more options.


Return for Risk

HNSS.L vs. URTH — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

HNSS.L
HNSS.L Risk / Return Rank: 9191
Overall Rank
HNSS.L Sharpe Ratio Rank: 9494
Sharpe Ratio Rank
HNSS.L Sortino Ratio Rank: 9090
Sortino Ratio Rank
HNSS.L Omega Ratio Rank: 9595
Omega Ratio Rank
HNSS.L Calmar Ratio Rank: 9393
Calmar Ratio Rank
HNSS.L Martin Ratio Rank: 8383
Martin Ratio Rank

URTH
URTH Risk / Return Rank: 6464
Overall Rank
URTH Sharpe Ratio Rank: 6565
Sharpe Ratio Rank
URTH Sortino Ratio Rank: 6464
Sortino Ratio Rank
URTH Omega Ratio Rank: 6363
Omega Ratio Rank
URTH Calmar Ratio Rank: 5959
Calmar Ratio Rank
URTH Martin Ratio Rank: 7171
Martin Ratio Rank
The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

HNSS.L vs. URTH - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) and iShares MSCI World ETF (URTH). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

Values are calculated on a 1-year rolling basis and updated daily. Risk-adjusted metrics are more stable over longer periods — use the period switch above to explore them.


HNSS.LURTHDifference
Sharpe ratioReturn per unit of total volatility

+0.92

Sortino ratioReturn per unit of downside risk

+0.80

Omega ratioGain probability vs. loss probability

1.64

1.41

+0.23

Calmar ratioReturn relative to maximum drawdown

5.70

3.62

+2.08

Martin ratioReturn relative to average drawdown

14.75

14.72

+0.03

HNSS.L vs. URTH - Sharpe Ratio Comparison

The current HNSS.L Sharpe Ratio is 3.14, which is higher than the URTH Sharpe Ratio of 2.22. The chart below compares the historical Sharpe Ratios of HNSS.L and URTH, calculated using daily returns over the previous 12 months. A higher Sharpe Ratio indicates better risk-adjusted performance relative to the risk-free rate.


Loading charts...

Drawdowns

HNSS.L vs. URTH - Drawdown Comparison

The maximum HNSS.L drawdown since its inception was -41.32%, which is greater than URTH's maximum drawdown of -27.18%. Use the drawdown chart below to compare losses from any high point for HNSS.L and URTH.


Loading charts...

Drawdown Indicators


HNSS.LURTHDifference

Max Drawdown

Largest peak-to-trough decline

-41.32%

-27.18%

-14.14%

Max Drawdown (1Y)

Largest decline over 1 year

-29.74%

-6.95%

-22.79%

Max Drawdown (3Y)

Largest decline over 3 years

-36.83%

-18.55%

-18.28%

Max Drawdown (5Y)

Largest decline over 5 years

-18.55%

Max Drawdown (10Y)

Largest decline over 10 years

-27.18%

Current Drawdown

Current decline from peak

-6.42%

-1.50%

-4.92%

Average Drawdown

Average peak-to-trough decline

-16.47%

-3.33%

-13.14%

Ulcer Index

Depth and duration of drawdowns from previous peaks

11.50%

1.71%

+9.79%

Volatility

HNSS.L vs. URTH - Volatility Comparison

HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) has a higher volatility of 13.65% compared to iShares MSCI World ETF (URTH) at 4.00%. This indicates that HNSS.L's price experiences larger fluctuations and is considered to be riskier than URTH based on this measure. The chart below showcases a comparison of their rolling one-month volatility.


Loading charts...

Volatility by Period


HNSS.LURTHDifference

Volatility (1M)

Calculated over the trailing 1-month period

13.65%

4.00%

+9.65%

Volatility (6M)

Calculated over the trailing 6-month period

26.17%

8.70%

+17.47%

Volatility (1Y)

Calculated over the trailing 1-year period

54.01%

11.34%

+42.67%

Volatility (5Y)

Calculated over the trailing 5-year period, annualized

38.29%

14.47%

+23.82%

Volatility (10Y)

Calculated over the trailing 10-year period, annualized

38.29%

16.70%

+21.59%

HNSS.L vs. URTH - Expense Ratio Comparison

HNSS.L has a 0.35% expense ratio, which is higher than URTH's 0.24% expense ratio.


Dividends

HNSS.L vs. URTH - Dividend Comparison

HNSS.L has not paid dividends to shareholders, while URTH's dividend yield for the trailing twelve months is around 1.36%.


PositionTTM20252024202320222021202020192018201720162015
HNSS.L
HSBC Nasdaq Global Semiconductor UCITS ETF
0.00%0.00%0.00%0.00%0.00%0.00%0.00%0.00%0.00%0.00%0.00%0.00%
URTH
iShares MSCI World ETF
1.36%1.48%1.47%1.70%1.68%1.50%1.52%2.16%2.30%1.88%2.15%2.35%

Frequently Asked Questions


HNSS.L and URTH have a correlation of 0.49, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

On fees, URTH is cheaper at 0.24% per year. The better choice depends on whether you care most about return, fees, risk, or income.

URTH is cheaper with a 0.24% expense ratio, compared with 0.35% for HNSS.L.

HNSS.L is categorized as Semiconductors, while URTH is Global Equities. HNSS.L tracks Nasdaq Global Semiconductor Index, while URTH tracks MSCI World Index (Net). They also come from different issuers: HSBC and iShares. Their fees differ too: 0.35% for HNSS.L and 0.24% for URTH.

Portfolio Optimizer

Find the right allocation for HNSS.L and URTH

Add both to a portfolio and optimize allocations for your target — whether that's maximizing returns, minimizing drawdowns, or balancing risk across holdings.

Open Portfolio Optimizer