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HNSC.L vs. ESIN.DE
Performance
Return for Risk
Drawdowns
Volatility
Dividends

Performance

HNSC.L vs. ESIN.DE - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and iShares MSCI Europe Industrials Sector UCITS ETF EUR (Acc) (ESIN.DE). The values are adjusted to include any dividend payments, if applicable.

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Different Trading Currencies

HNSC.L is traded in USD, while ESIN.DE is traded in EUR. To make them comparable, the ESIN.DE values have been converted to USD using the latest available exchange rates.

Returns By Period

In the year-to-date period, HNSC.L achieves a 98.34% return, which is significantly higher than ESIN.DE's 6.89% return.


HNSC.L

1D
1.63%
1M
30.01%
YTD
98.34%
6M
101.55%
1Y
205.51%
3Y*
63.81%
5Y*
10Y*

ESIN.DE

1D
-1.00%
1M
1.74%
YTD
6.89%
6M
11.27%
1Y
17.82%
3Y*
22.36%
5Y*
11.69%
10Y*
*Multi-year figures are annualized to reflect compound growth (CAGR)

HNSC.L vs. ESIN.DE - Yearly Performance Comparison


2026 (YTD)2025202420232022
HNSC.L
HSBC Nasdaq Global Semiconductor UCITS ETF USD
98.34%55.83%17.71%50.92%-18.53%
ESIN.DE
iShares MSCI Europe Industrials Sector UCITS ETF EUR (Acc)
6.89%41.46%7.91%30.99%-13.27%

Correlation

The correlation between HNSC.L and ESIN.DE is 0.53, which is moderate. They share some common price drivers but move independently often enough to provide real diversification benefit when combined.


Correlation
Correlation (1Y)
Calculated over the trailing 1-year period

0.53

Correlation (3Y)
Calculated over the trailing 3-year period

0.51

Correlation (All Time)
Calculated using the full available price history since Feb 8, 2022

0.41

The correlation between HNSC.L and ESIN.DE shifts across timeframes, from 0.41 (all time) to 0.53 (1 year), reflecting how their relationship changes across market environments.

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Return for Risk

HNSC.L vs. ESIN.DE — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

HNSC.L
HNSC.L Risk / Return Rank: 9797
Overall Rank
HNSC.L Sharpe Ratio Rank: 9898
Sharpe Ratio Rank
HNSC.L Sortino Ratio Rank: 9797
Sortino Ratio Rank
HNSC.L Omega Ratio Rank: 9696
Omega Ratio Rank
HNSC.L Calmar Ratio Rank: 9898
Calmar Ratio Rank
HNSC.L Martin Ratio Rank: 9797
Martin Ratio Rank

ESIN.DE
ESIN.DE Risk / Return Rank: 2525
Overall Rank
ESIN.DE Sharpe Ratio Rank: 2222
Sharpe Ratio Rank
ESIN.DE Sortino Ratio Rank: 2424
Sortino Ratio Rank
ESIN.DE Omega Ratio Rank: 2323
Omega Ratio Rank
ESIN.DE Calmar Ratio Rank: 2525
Calmar Ratio Rank
ESIN.DE Martin Ratio Rank: 3030
Martin Ratio Rank
The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

HNSC.L vs. ESIN.DE - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and iShares MSCI Europe Industrials Sector UCITS ETF EUR (Acc) (ESIN.DE). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.


HNSC.LESIN.DEDifference
Sharpe ratioReturn per unit of total volatility

+5.32

Sortino ratioReturn per unit of downside risk

+4.69

Omega ratioGain probability vs. loss probability

1.78

1.16

+0.62

Calmar ratioReturn relative to maximum drawdown

13.62

1.15

+12.46

Martin ratioReturn relative to average drawdown

49.03

4.10

+44.93

HNSC.L vs. ESIN.DE - Sharpe Ratio Comparison

The current HNSC.L Sharpe Ratio is 6.16, which is higher than the ESIN.DE Sharpe Ratio of 0.84. The chart below compares the historical Sharpe Ratios of HNSC.L and ESIN.DE, calculated using daily returns over the previous 12 months. A higher Sharpe Ratio indicates better risk-adjusted performance relative to the risk-free rate.


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Sharpe Ratios by Period


HNSC.LESIN.DEDifference

Sharpe Ratio (1Y)

Calculated over the trailing 1-year period

6.16

0.84

+5.32

Sharpe Ratio (5Y)

Calculated over the trailing 5-year period

0.53

Sharpe Ratio (All Time)

Calculated using the full available price history

1.66

0.54

+1.11

Drawdowns

HNSC.L vs. ESIN.DE - Drawdown Comparison

The maximum HNSC.L drawdown since its inception was -39.32%, roughly equal to the maximum ESIN.DE drawdown of -39.61%. Use the drawdown chart below to compare losses from any high point for HNSC.L and ESIN.DE.


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Drawdown Indicators


HNSC.LESIN.DEDifference

Max Drawdown

Largest peak-to-trough decline

-39.32%

-39.61%

+0.29%

Max Drawdown (1Y)

Largest decline over 1 year

-14.99%

-15.36%

+0.37%

Max Drawdown (3Y)

Largest decline over 3 years

-37.21%

-18.27%

-18.94%

Max Drawdown (5Y)

Largest decline over 5 years

-39.61%

Current Drawdown

Current decline from peak

0.00%

-4.52%

+4.52%

Average Drawdown

Average peak-to-trough decline

-9.52%

-8.73%

-0.79%

Ulcer Index

Depth and duration of drawdowns from previous peaks

4.17%

4.34%

-0.17%

Volatility

HNSC.L vs. ESIN.DE - Volatility Comparison

HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) has a higher volatility of 14.12% compared to iShares MSCI Europe Industrials Sector UCITS ETF EUR (Acc) (ESIN.DE) at 7.86%. This indicates that HNSC.L's price experiences larger fluctuations and is considered to be riskier than ESIN.DE based on this measure. The chart below showcases a comparison of their rolling one-month volatility.


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Volatility by Period


HNSC.LESIN.DEDifference

Volatility (1M)

Calculated over the trailing 1-month period

14.12%

7.86%

+6.26%

Volatility (6M)

Calculated over the trailing 6-month period

25.99%

17.88%

+8.11%

Volatility (1Y)

Calculated over the trailing 1-year period

33.21%

21.14%

+12.07%

Volatility (5Y)

Calculated over the trailing 5-year period, annualized

37.72%

21.81%

+15.91%

Volatility (10Y)

Calculated over the trailing 10-year period, annualized

37.72%

21.78%

+15.94%

HNSC.L vs. ESIN.DE - Expense Ratio Comparison

HNSC.L has a 0.35% expense ratio, which is higher than ESIN.DE's 0.18% expense ratio.


Dividends

HNSC.L vs. ESIN.DE - Dividend Comparison

Neither HNSC.L nor ESIN.DE has paid dividends to shareholders.


Tickers have no history of dividend payments

Frequently Asked Questions


HNSC.L and ESIN.DE have a correlation of 0.53, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

On fees, ESIN.DE is cheaper at 0.18% per year. The better choice depends on whether you care most about return, fees, risk, or income.

ESIN.DE is cheaper with a 0.18% expense ratio, compared with 0.35% for HNSC.L.

HNSC.L is categorized as Semiconductors, while ESIN.DE is Industrials Equities. HNSC.L tracks Nasdaq Global Semiconductor, while ESIN.DE tracks MSCI World/Materials NR USD. They also come from different issuers: HSBC and iShares. Their fees differ too: 0.35% for HNSC.L and 0.18% for ESIN.DE.

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