DRAM vs. SOXQ
DRAM (Roundhill Memory ETF) and SOXQ (Invesco PHLX Semiconductor ETF) are both exchange-traded funds - DRAM is a Technology Equities fund actively managed by Roundhill, while SOXQ is a Semiconductors fund tracking the PHLX Semiconductor Sector Index. DRAM is actively managed, while SOXQ is passively managed. Their correlation of 0.84 means they have usually moved in the same direction. DRAM charges 0.65%/yr vs 0.19%/yr for SOXQ.
Performance
DRAM vs. SOXQ - Performance Comparison
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Returns By Period
DRAM
- 1D
- -3.76%
- 1M
- -16.92%
- 6M
- —
- YTD
- —
- 1Y
- —
- 3Y*
- —
- 5Y*
- —
- 10Y*
- —
- ALL TIME*
- —
SOXQ
- 1D
- 0.15%
- 1M
- -10.31%
- 6M
- 41.59%
- YTD
- 59.97%
- 1Y
- 105.49%
- 3Y*
- 44.02%
- 5Y*
- 28.65%
- 10Y*
- —
- ALL TIME*
- 29.00%
Liquidity Comparison
| Position | Avg. Volume Value (2W) | Avg. Volume Value (1M) | Avg. Volume Value (3M) |
|---|---|---|---|
| $4.23B | $4.59B | $3.52B | |
| $219.33M | $233.61M | $278.30M |
DRAM vs. SOXQ - Yearly Performance Comparison
| 2026 (YTD) | |
|---|---|
DRAM Roundhill Memory ETF | 86.56% |
SOXQ Invesco PHLX Semiconductor ETF | 45.08% |
Correlation
The correlation between DRAM and SOXQ is 0.84, meaning they have usually moved in the same direction, including during past declines.
| Correlation | |
|---|---|
Correlation (All Time) Calculated using the full available price history since Apr 2, 2026 | 0.84 |
DRAM vs. SOXQ - Sectors Allocation Comparison
Sectors
DRAM
SOXQ
Technology
Basic Materials
-
-
Communication Services
-
-
Consumer Cyclical
-
-
Consumer Defensive
-
-
Energy
-
-
Healthcare
-
-
Industrials
-
-
Real Estate
-
-
Utilities
-
-
Financial Services
Technology
DRAM
SOXQ
Basic Materials
DRAM
-
SOXQ
-
Communication Services
DRAM
-
SOXQ
-
Consumer Cyclical
DRAM
-
SOXQ
-
Consumer Defensive
DRAM
-
SOXQ
-
Energy
DRAM
-
SOXQ
-
Healthcare
DRAM
-
SOXQ
-
Industrials
DRAM
-
SOXQ
-
Real Estate
DRAM
-
SOXQ
-
Utilities
DRAM
-
SOXQ
-
Financial Services
DRAM
SOXQ
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Return for Risk
DRAM vs. SOXQ — Risk / Return Rank
DRAM
Risk / return metrics aren't available yet — we need at least 12 months of trading data to calculate them.
SOXQ
DRAM vs. SOXQ - Risk-Adjusted Trends Comparison
This table presents a comparison of risk-adjusted performance metrics for Roundhill Memory ETF (DRAM) and Invesco PHLX Semiconductor ETF (SOXQ). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.
Values are calculated on a 1-year rolling basis and updated daily. Risk-adjusted metrics are more stable over longer periods — use the period switch above to explore them.
| DRAM | SOXQ | Difference | |
|---|---|---|---|
| Sharpe ratioReturn per unit of total volatility | — | — | |
| Sortino ratioReturn per unit of downside risk | — | — | |
| Omega ratioGain probability vs. loss probability | — | 1.36 | — |
| Calmar ratioReturn relative to maximum drawdown | — | 3.61 | — |
| Martin ratioReturn relative to average drawdown | — | 15.05 | — |
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Drawdowns
DRAM vs. SOXQ - Drawdown Comparison
The maximum DRAM drawdown since its inception was -44.44%, roughly equal to the maximum SOXQ drawdown of -46.01%. Use the drawdown chart below to compare losses from any high point for DRAM and SOXQ.
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Drawdown Indicators
| DRAM | SOXQ | Difference | |
|---|---|---|---|
Max DrawdownLargest peak-to-trough decline | -44.44% | -46.01% | +1.57% |
Max Drawdown (1Y)Largest decline over 1 year | — | -28.56% | — |
Max Drawdown (3Y)Largest decline over 3 years | — | -39.36% | — |
Max Drawdown (5Y)Largest decline over 5 years | — | -46.01% | — |
Current DrawdownCurrent decline from peak | -37.60% | -22.64% | -14.96% |
Average DrawdownAverage peak-to-trough decline | -10.50% | -12.92% | +2.42% |
Ulcer IndexDepth and duration of drawdowns from previous peaks | — | 6.83% | — |
Volatility
DRAM vs. SOXQ - Volatility Comparison
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Volatility by Period
| DRAM | SOXQ | Difference | |
|---|---|---|---|
Volatility (1M)Calculated over the trailing 1-month period | — | 17.19% | — |
Volatility (6M)Calculated over the trailing 6-month period | — | 37.70% | — |
Volatility (1Y)Calculated over the trailing 1-year period | 100.96% | 43.52% | +57.44% |
Volatility (5Y)Calculated over the trailing 5-year period, annualized | 100.96% | 38.28% | +62.68% |
Volatility (10Y)Calculated over the trailing 10-year period, annualized | 100.96% | 37.93% | +63.03% |
DRAM vs. SOXQ - Expense Ratio Comparison
DRAM has a 0.65% expense ratio, which is higher than SOXQ's 0.19% expense ratio.
Dividends
DRAM vs. SOXQ - Dividend Comparison
DRAM has not paid dividends to shareholders, while SOXQ's dividend yield for the trailing twelve months is around 0.32%.
| Position | TTM | 2025 | 2024 | 2023 | 2022 | 2021 |
|---|---|---|---|---|---|---|
DRAM Roundhill Memory ETF | 0.00% | 0.00% | 0.00% | 0.00% | 0.00% | 0.00% |
SOXQ Invesco PHLX Semiconductor ETF | 0.32% | 0.50% | 0.68% | 0.87% | 1.36% | 0.72% |
Frequently Asked Questions
DRAM and SOXQ have a correlation of 0.84, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.
On fees, SOXQ is cheaper at 0.19% per year. The better choice depends on whether you care most about return, fees, risk, or income.
SOXQ is cheaper with a 0.19% expense ratio, compared with 0.65% for DRAM.
SOXQ has the higher dividend yield at 0.32%, compared with 0.00% for DRAM.
DRAM is categorized as Technology Equities, while SOXQ is Semiconductors. They also come from different issuers: Roundhill and Invesco. Their fees differ too: 0.65% for DRAM and 0.19% for SOXQ.
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