DRAM vs. SOXQ

Last updated Jul 14, 2026

DRAM (Roundhill Memory ETF) and SOXQ (Invesco PHLX Semiconductor ETF) are both exchange-traded funds - DRAM is a Technology Equities fund actively managed by Roundhill, while SOXQ is a Semiconductors fund tracking the PHLX Semiconductor Sector Index. DRAM is actively managed, while SOXQ is passively managed. A 0.79 correlation means they provide meaningful diversification when combined. DRAM charges 0.65%/yr vs 0.19%/yr for SOXQ.

Performance

DRAM vs. SOXQ - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in Roundhill Memory ETF (DRAM) and Invesco PHLX Semiconductor ETF (SOXQ). The values are adjusted to include any dividend payments, if applicable.

Returns By Period

DRAM

• 1D: -9.11%
• 1M: -11.86%
• 6M: —
• YTD: —
• 1Y: —
• 3Y*: —
• 5Y*: —
• 10Y*: —

SOXQ

• 1D: -4.86%
• 1M: -7.72%
• 6M: 61.03%
• YTD: 74.43%
• 1Y: 117.47%
• 3Y*: 49.64%
• 5Y*: 31.46%
• 10Y*: —

*Multi-year figures are annualized to reflect compound growth (CAGR)

DRAM vs. SOXQ - Yearly Performance Comparison

	2026 (YTD)
DRAM Roundhill Memory ETF	112.22%
SOXQ Invesco PHLX Semiconductor ETF	58.20%

Correlation

The correlation between DRAM and SOXQ is 0.79, which is moderate. They share some common price drivers but move independently often enough to provide real diversification benefit when combined.

	Correlation
Correlation (All Time) Calculated using the full available price history since Apr 2, 2026	0.79

DRAM vs. SOXQ - Sectors Allocation Comparison

Sectors	DRAM	SOXQ
Technology	58.3%	100.0%
Basic Materials	-	-
Communication Services	-	-
Consumer Cyclical	-	-
Consumer Defensive	-	-
Energy	-	-
Healthcare	-	-
Industrials	-	-
Real Estate	-	-
Utilities	-	-
Financial Services	-2.3%	0.1%

Return for Risk

DRAM vs. SOXQ — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

DRAM

Risk / return metrics aren't available yet — we need at least 12 months of trading data to calculate them.

SOXQ

SOXQ Risk / Return Rank: 92
SOXQ Sharpe Ratio Rank: 94
SOXQ Sortino Ratio Rank: 86
SOXQ Omega Ratio Rank: 88
SOXQ Calmar Ratio Rank: 96
SOXQ Martin Ratio Rank: 95

The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

DRAM vs. SOXQ - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for Roundhill Memory ETF (DRAM) and Invesco PHLX Semiconductor ETF (SOXQ). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

Values are calculated on a 1-year rolling basis and updated daily. Risk-adjusted metrics are more stable over longer periods — use the period switch above to explore them.

	DRAM	SOXQ	Difference
Sharpe ratio: Return per unit of total volatility	—	2.87	—
Sortino ratio: Return per unit of downside risk	—	3.07	—
Omega ratio: Gain probability vs. loss probability	—	1.43	—
Calmar ratio: Return relative to maximum drawdown	—	7.42	—
Martin ratio: Return relative to average drawdown	—	23.55	—

Drawdowns

DRAM vs. SOXQ - Drawdown Comparison

The maximum DRAM drawdown since its inception was -29.01%, smaller than the maximum SOXQ drawdown of -46.01%. Use the drawdown chart below to compare losses from any high point for DRAM and SOXQ.

Drawdown Indicators

	DRAM	SOXQ	Difference
Max Drawdown Largest peak-to-trough decline	-29.01%	-46.01%	+17.00%
Max Drawdown (1Y) Largest decline over 1 year	—	-15.92%	—
Max Drawdown (3Y) Largest decline over 3 years	—	-39.36%	—
Max Drawdown (5Y) Largest decline over 5 years	—	-46.01%	—
Current Drawdown Current decline from peak	-29.01%	-15.65%	-13.36%
Average Drawdown Average peak-to-trough decline	-5.85%	-12.84%	+6.99%
Ulcer Index Depth and duration of drawdowns from previous peaks	—	5.01%	—

Volatility

Volatility by Period

	DRAM	SOXQ	Difference
Volatility (1M) Calculated over the trailing 1-month period	—	21.73%	—
Volatility (6M) Calculated over the trailing 6-month period	—	35.36%	—
Volatility (1Y) Calculated over the trailing 1-year period	96.31%	41.31%	+55.00%
Volatility (5Y) Calculated over the trailing 5-year period, annualized	96.31%	37.85%	+58.46%
Volatility (10Y) Calculated over the trailing 10-year period, annualized	96.31%	37.61%	+58.70%

DRAM vs. SOXQ - Expense Ratio Comparison

DRAM has a 0.65% expense ratio, which is higher than SOXQ's 0.19% expense ratio.

Dividends

DRAM vs. SOXQ - Dividend Comparison

DRAM has not paid dividends to shareholders, while SOXQ's dividend yield for the trailing twelve months is around 0.29%.

Position	TTM	2025	2024	2023	2022	2021
DRAM Roundhill Memory ETF	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%
SOXQ Invesco PHLX Semiconductor ETF	0.29%	0.50%	0.68%	0.87%	1.36%	0.72%

Frequently Asked Questions

Can I hold both DRAM and SOXQ in my portfolio?

DRAM and SOXQ have a correlation of 0.79, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

Which ETF is better, DRAM or SOXQ?

On fees, SOXQ is cheaper at 0.19% per year. The better choice depends on whether you care most about return, fees, risk, or income.

Which ETF is cheaper, DRAM or SOXQ?

SOXQ is cheaper with a 0.19% expense ratio, compared with 0.65% for DRAM.

Which ETF pays a higher dividend yield, DRAM or SOXQ?

SOXQ has the higher dividend yield at 0.29%, compared with 0.00% for DRAM.

What is the main difference between DRAM and SOXQ?

DRAM is categorized as Technology Equities, while SOXQ is Semiconductors. They also come from different issuers: Roundhill and Invesco. Their fees differ too: 0.65% for DRAM and 0.19% for SOXQ.