XNGS.L vs. HNSS.L
XNGS.L (Xtrackers MSCI Next Generation Internet Innovation UCITS ETF 1C) and HNSS.L (HSBC Nasdaq Global Semiconductor UCITS ETF) are both exchange-traded funds - XNGS.L is a Technology Equities fund tracking the MSCI World/Information Tech NR USD, while HNSS.L is a Semiconductors fund tracking the Nasdaq Global Semiconductor Index. Both are passively managed. Over the past 3 years, XNGS.L returned 27.39%/yr vs 58.47%/yr for HNSS.L. Their correlation of 0.80 suggests significant overlap in exposure. Both charge a 0.35% expense ratio.
Performance
XNGS.L vs. HNSS.L - Performance Comparison
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Returns By Period
In the year-to-date period, XNGS.L achieves a 17.59% return, which is significantly lower than HNSS.L's 91.77% return.
XNGS.L
- 1D
- -0.89%
- 1M
- 12.71%
- YTD
- 17.59%
- 6M
- 15.55%
- 1Y
- 34.17%
- 3Y*
- 27.39%
- 5Y*
- —
- 10Y*
- —
HNSS.L
- 1D
- -2.66%
- 1M
- 21.88%
- YTD
- 91.77%
- 6M
- 93.25%
- 1Y
- 194.16%
- 3Y*
- 58.47%
- 5Y*
- —
- 10Y*
- —
XNGS.L vs. HNSS.L - Yearly Performance Comparison
| 2026 (YTD) | 2025 | 2024 | 2023 | 2022 | |
|---|---|---|---|---|---|
XNGS.L Xtrackers MSCI Next Generation Internet Innovation UCITS ETF 1C | 17.59% | 11.63% | 38.09% | 48.85% | -12.98% |
HNSS.L HSBC Nasdaq Global Semiconductor UCITS ETF | 91.77% | 45.50% | 19.96% | 60.90% | -9.25% |
Correlation
The correlation between XNGS.L and HNSS.L is 0.71, which is moderate. They share some common price drivers but move independently often enough to provide real diversification benefit when combined.
| Correlation | |
|---|---|
Correlation (1Y) Calculated over the trailing 1-year period | 0.71 |
Correlation (3Y) Calculated over the trailing 3-year period | 0.80 |
Correlation (All Time) Calculated using the full available price history since Jul 21, 2022 | 0.80 |
The correlation between XNGS.L and HNSS.L has been stable across timeframes, ranging from 0.71 to 0.80 - a consistent structural relationship.
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Return for Risk
XNGS.L vs. HNSS.L — Risk / Return Rank
XNGS.L
HNSS.L
XNGS.L vs. HNSS.L - Risk-Adjusted Trends Comparison
This table presents a comparison of risk-adjusted performance metrics for Xtrackers MSCI Next Generation Internet Innovation UCITS ETF 1C (XNGS.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.
| XNGS.L | HNSS.L | Difference | |
|---|---|---|---|
| Sharpe ratioReturn per unit of total volatility | -4.08 | ||
| Sortino ratioReturn per unit of downside risk | -3.30 | ||
| Omega ratioGain probability vs. loss probability | 1.35 | 1.78 | -0.43 |
| Calmar ratioReturn relative to maximum drawdown | 1.69 | 14.66 | -12.98 |
| Martin ratioReturn relative to average drawdown | 4.24 | 50.30 | -46.07 |
Data is calculated on a 1-year rolling basis and updated daily. The trend shows the change in the indicator over the past month. | |||
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Sharpe Ratios by Period
| XNGS.L | HNSS.L | Difference | |
|---|---|---|---|
Sharpe Ratio (1Y)Calculated over the trailing 1-year period | 2.00 | 6.08 | -4.08 |
Sharpe Ratio (All Time)Calculated using the full available price history | 1.24 | 1.34 | -0.09 |
Drawdowns
XNGS.L vs. HNSS.L - Drawdown Comparison
The maximum XNGS.L drawdown since its inception was -24.85%, smaller than the maximum HNSS.L drawdown of -36.83%. Use the drawdown chart below to compare losses from any high point for XNGS.L and HNSS.L.
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Drawdown Indicators
| XNGS.L | HNSS.L | Difference | |
|---|---|---|---|
Max DrawdownLargest peak-to-trough decline | -24.85% | -36.83% | +11.98% |
Max Drawdown (1Y)Largest decline over 1 year | -20.19% | -13.16% | -7.03% |
Max Drawdown (3Y)Largest decline over 3 years | -24.85% | -36.83% | +11.98% |
Current DrawdownCurrent decline from peak | -1.31% | -2.66% | +1.35% |
Average DrawdownAverage peak-to-trough decline | -5.28% | -9.55% | +4.27% |
Ulcer IndexDepth and duration of drawdowns from previous peaks | 8.05% | 3.84% | +4.21% |
Volatility
XNGS.L vs. HNSS.L - Volatility Comparison
The current volatility for Xtrackers MSCI Next Generation Internet Innovation UCITS ETF 1C (XNGS.L) is 5.17%, while HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) has a volatility of 13.36%. This indicates that XNGS.L experiences smaller price fluctuations and is considered to be less risky than HNSS.L based on this measure. The chart below showcases a comparison of their rolling one-month volatility.
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Volatility by Period
| XNGS.L | HNSS.L | Difference | |
|---|---|---|---|
Volatility (1M)Calculated over the trailing 1-month period | 5.17% | 13.36% | -8.19% |
Volatility (6M)Calculated over the trailing 6-month period | 12.50% | 24.62% | -12.12% |
Volatility (1Y)Calculated over the trailing 1-year period | 16.97% | 31.72% | -14.75% |
Volatility (5Y)Calculated over the trailing 5-year period, annualized | 19.86% | 30.12% | -10.26% |
Volatility (10Y)Calculated over the trailing 10-year period, annualized | 19.86% | 30.12% | -10.26% |
XNGS.L vs. HNSS.L - Expense Ratio Comparison
Both XNGS.L and HNSS.L have an expense ratio of 0.35%.
Dividends
XNGS.L vs. HNSS.L - Dividend Comparison
Neither XNGS.L nor HNSS.L has paid dividends to shareholders.
Frequently Asked Questions
XNGS.L and HNSS.L have a correlation of 0.71, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.
Both ETFs have the same 0.35% expense ratio. The better choice depends on whether you care most about return, fees, risk, or income.
XNGS.L and HNSS.L have the same expense ratio: 0.35% per year.
XNGS.L is categorized as Technology Equities, while HNSS.L is Semiconductors. XNGS.L tracks MSCI World/Information Tech NR USD, while HNSS.L tracks Nasdaq Global Semiconductor Index. They also come from different issuers: DWS and HSBC.
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