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SMH3.L vs. HNSS.L
Performance
Return for Risk
Dividends
Drawdowns
Volatility

Performance

SMH3.L vs. HNSS.L - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in Leverage Shares 3x Long Semiconductors ETP Securities (SMH3.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). The values are adjusted to include any dividend payments, if applicable.

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SMH3.L vs. HNSS.L - Yearly Performance Comparison


2026 (YTD)2025202420232022
SMH3.L
Leverage Shares 3x Long Semiconductors ETP Securities
12.49%74.67%66.99%261.41%-76.64%
HNSS.L
HSBC Nasdaq Global Semiconductor UCITS ETF
14.02%56.48%17.97%69.39%-27.37%
Different Trading Currencies

SMH3.L is traded in USD, while HNSS.L is traded in GBP. To make them comparable, the HNSS.L values have been converted to USD using the latest available exchange rates.

Returns By Period

In the year-to-date period, SMH3.L achieves a 12.49% return, which is significantly lower than HNSS.L's 14.02% return.


SMH3.L

1D
18.04%
1M
-10.93%
YTD
12.49%
6M
34.61%
1Y
269.12%
3Y*
82.15%
5Y*
10Y*

HNSS.L

1D
6.63%
1M
-4.62%
YTD
14.02%
6M
32.75%
1Y
101.89%
3Y*
40.83%
5Y*
10Y*
*Multi-year figures are annualized to reflect compound growth (CAGR)

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SMH3.L vs. HNSS.L - Expense Ratio Comparison

SMH3.L has a 0.75% expense ratio, which is higher than HNSS.L's 0.35% expense ratio.


Return for Risk

SMH3.L vs. HNSS.L — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

SMH3.L
SMH3.L Risk / Return Rank: 9494
Overall Rank
SMH3.L Sharpe Ratio Rank: 9696
Sharpe Ratio Rank
SMH3.L Sortino Ratio Rank: 9292
Sortino Ratio Rank
SMH3.L Omega Ratio Rank: 8686
Omega Ratio Rank
SMH3.L Calmar Ratio Rank: 9898
Calmar Ratio Rank
SMH3.L Martin Ratio Rank: 9797
Martin Ratio Rank

HNSS.L
HNSS.L Risk / Return Rank: 9797
Overall Rank
HNSS.L Sharpe Ratio Rank: 9797
Sharpe Ratio Rank
HNSS.L Sortino Ratio Rank: 9696
Sortino Ratio Rank
HNSS.L Omega Ratio Rank: 9494
Omega Ratio Rank
HNSS.L Calmar Ratio Rank: 9898
Calmar Ratio Rank
HNSS.L Martin Ratio Rank: 9898
Martin Ratio Rank
The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

SMH3.L vs. HNSS.L - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for Leverage Shares 3x Long Semiconductors ETP Securities (SMH3.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.


SMH3.LHNSS.LDifference

Sharpe ratio

Return per unit of total volatility

2.75

3.04

-0.28

Sortino ratio

Return per unit of downside risk

2.78

3.54

-0.76

Omega ratio

Gain probability vs. loss probability

1.36

1.46

-0.10

Calmar ratio

Return relative to maximum drawdown

6.66

6.45

+0.21

Martin ratio

Return relative to average drawdown

21.41

23.98

-2.57

SMH3.L vs. HNSS.L - Sharpe Ratio Comparison

The current SMH3.L Sharpe Ratio is 2.75, which is comparable to the HNSS.L Sharpe Ratio of 3.04. The chart below compares the historical Sharpe Ratios of SMH3.L and HNSS.L, offering insights into how both investments have performed under varying market conditions. These values are calculated using daily returns over the previous 12 months.


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Sharpe Ratios by Period


SMH3.LHNSS.LDifference

Sharpe Ratio (1Y)

Calculated over the trailing 1-year period

2.75

3.04

-0.28

Sharpe Ratio (All Time)

Calculated using the full available price history

0.15

0.82

-0.66

Correlation

The correlation between SMH3.L and HNSS.L is 0.90, which is considered to be high. That indicates a strong positive relationship between their price movements. Having highly-correlated positions in a portfolio may signal a lack of diversification, potentially leading to increased risk during market downturns.


Dividends

SMH3.L vs. HNSS.L - Dividend Comparison

Neither SMH3.L nor HNSS.L has paid dividends to shareholders.


Tickers have no history of dividend payments

Drawdowns

SMH3.L vs. HNSS.L - Drawdown Comparison

The maximum SMH3.L drawdown since its inception was -89.37%, which is greater than HNSS.L's maximum drawdown of -41.16%. Use the drawdown chart below to compare losses from any high point for SMH3.L and HNSS.L.


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Drawdown Indicators


SMH3.LHNSS.LDifference

Max Drawdown

Largest peak-to-trough decline

-89.37%

-36.83%

-52.54%

Max Drawdown (1Y)

Largest decline over 1 year

-43.09%

-14.21%

-28.88%

Current Drawdown

Current decline from peak

-24.85%

-7.68%

-17.17%

Average Drawdown

Average peak-to-trough decline

-50.06%

-9.88%

-40.18%

Ulcer Index

Depth and duration of drawdowns from previous peaks

12.21%

3.85%

+8.36%

Volatility

SMH3.L vs. HNSS.L - Volatility Comparison

Leverage Shares 3x Long Semiconductors ETP Securities (SMH3.L) has a higher volatility of 30.75% compared to HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) at 11.25%. This indicates that SMH3.L's price experiences larger fluctuations and is considered to be riskier than HNSS.L based on this measure. The chart below showcases a comparison of their rolling one-month volatility.


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Volatility by Period


SMH3.LHNSS.LDifference

Volatility (1M)

Calculated over the trailing 1-month period

30.75%

11.25%

+19.50%

Volatility (6M)

Calculated over the trailing 6-month period

67.92%

23.99%

+43.93%

Volatility (1Y)

Calculated over the trailing 1-year period

97.22%

33.41%

+63.81%

Volatility (5Y)

Calculated over the trailing 5-year period, annualized

99.97%

31.28%

+68.69%

Volatility (10Y)

Calculated over the trailing 10-year period, annualized

99.97%

31.28%

+68.69%