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HNSC.L vs. SOXL.L
Performance
Return for Risk
Dividends
Drawdowns
Volatility

Performance

HNSC.L vs. SOXL.L - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and Leverage Shares 4x Long Semiconductors ETP Securities (SOXL.L). The values are adjusted to include any dividend payments, if applicable.

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HNSC.L vs. SOXL.L - Yearly Performance Comparison


2026 (YTD)20252024
HNSC.L
HSBC Nasdaq Global Semiconductor UCITS ETF USD
14.72%55.83%-1.55%
SOXL.L
Leverage Shares 4x Long Semiconductors ETP Securities
18.21%11.41%-59.99%

Returns By Period

In the year-to-date period, HNSC.L achieves a 14.72% return, which is significantly lower than SOXL.L's 18.21% return.


HNSC.L

1D
6.92%
1M
-4.15%
YTD
14.72%
6M
33.08%
1Y
102.53%
3Y*
40.75%
5Y*
10Y*

SOXL.L

1D
27.69%
1M
-19.65%
YTD
18.21%
6M
40.09%
1Y
222.64%
3Y*
5Y*
10Y*
*Multi-year figures are annualized to reflect compound growth (CAGR)

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HNSC.L vs. SOXL.L - Expense Ratio Comparison

HNSC.L has a 0.35% expense ratio, which is lower than SOXL.L's 0.75% expense ratio.


Return for Risk

HNSC.L vs. SOXL.L — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

HNSC.L
HNSC.L Risk / Return Rank: 9797
Overall Rank
HNSC.L Sharpe Ratio Rank: 9797
Sharpe Ratio Rank
HNSC.L Sortino Ratio Rank: 9797
Sortino Ratio Rank
HNSC.L Omega Ratio Rank: 9494
Omega Ratio Rank
HNSC.L Calmar Ratio Rank: 9898
Calmar Ratio Rank
HNSC.L Martin Ratio Rank: 9898
Martin Ratio Rank

SOXL.L
SOXL.L Risk / Return Rank: 8484
Overall Rank
SOXL.L Sharpe Ratio Rank: 8181
Sharpe Ratio Rank
SOXL.L Sortino Ratio Rank: 8484
Sortino Ratio Rank
SOXL.L Omega Ratio Rank: 7575
Omega Ratio Rank
SOXL.L Calmar Ratio Rank: 9595
Calmar Ratio Rank
SOXL.L Martin Ratio Rank: 8888
Martin Ratio Rank
The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

HNSC.L vs. SOXL.L - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) and Leverage Shares 4x Long Semiconductors ETP Securities (SOXL.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.


HNSC.LSOXL.LDifference

Sharpe ratio

Return per unit of total volatility

3.04

1.62

+1.43

Sortino ratio

Return per unit of downside risk

3.56

2.33

+1.22

Omega ratio

Gain probability vs. loss probability

1.46

1.30

+0.16

Calmar ratio

Return relative to maximum drawdown

6.74

4.14

+2.60

Martin ratio

Return relative to average drawdown

24.37

11.56

+12.81

HNSC.L vs. SOXL.L - Sharpe Ratio Comparison

The current HNSC.L Sharpe Ratio is 3.04, which is higher than the SOXL.L Sharpe Ratio of 1.62. The chart below compares the historical Sharpe Ratios of HNSC.L and SOXL.L, offering insights into how both investments have performed under varying market conditions. These values are calculated using daily returns over the previous 12 months.


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Sharpe Ratios by Period


HNSC.LSOXL.LDifference

Sharpe Ratio (1Y)

Calculated over the trailing 1-year period

3.04

1.62

+1.43

Sharpe Ratio (All Time)

Calculated using the full available price history

1.04

-0.21

+1.24

Correlation

The correlation between HNSC.L and SOXL.L is 0.97, which is considered to be high. That indicates a strong positive relationship between their price movements. Having highly-correlated positions in a portfolio may signal a lack of diversification, potentially leading to increased risk during market downturns.


Dividends

HNSC.L vs. SOXL.L - Dividend Comparison

Neither HNSC.L nor SOXL.L has paid dividends to shareholders.


Tickers have no history of dividend payments

Drawdowns

HNSC.L vs. SOXL.L - Drawdown Comparison

The maximum HNSC.L drawdown since its inception was -39.32%, smaller than the maximum SOXL.L drawdown of -95.66%. Use the drawdown chart below to compare losses from any high point for HNSC.L and SOXL.L.


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Drawdown Indicators


HNSC.LSOXL.LDifference

Max Drawdown

Largest peak-to-trough decline

-39.32%

-95.66%

+56.34%

Max Drawdown (1Y)

Largest decline over 1 year

-15.57%

-59.55%

+43.98%

Current Drawdown

Current decline from peak

-9.02%

-66.20%

+57.18%

Average Drawdown

Average peak-to-trough decline

-9.96%

-64.19%

+54.23%

Ulcer Index

Depth and duration of drawdowns from previous peaks

4.15%

18.63%

-14.48%

Volatility

HNSC.L vs. SOXL.L - Volatility Comparison

The current volatility for HSBC Nasdaq Global Semiconductor UCITS ETF USD (HNSC.L) is 11.66%, while Leverage Shares 4x Long Semiconductors ETP Securities (SOXL.L) has a volatility of 45.32%. This indicates that HNSC.L experiences smaller price fluctuations and is considered to be less risky than SOXL.L based on this measure. The chart below showcases a comparison of their rolling one-month volatility.


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Volatility by Period


HNSC.LSOXL.LDifference

Volatility (1M)

Calculated over the trailing 1-month period

11.66%

45.32%

-33.66%

Volatility (6M)

Calculated over the trailing 6-month period

24.16%

97.24%

-73.08%

Volatility (1Y)

Calculated over the trailing 1-year period

33.53%

136.74%

-103.21%

Volatility (5Y)

Calculated over the trailing 5-year period, annualized

37.14%

131.73%

-94.59%

Volatility (10Y)

Calculated over the trailing 10-year period, annualized

37.14%

131.73%

-94.59%