HCAD.L vs. HNSS.L

Last updated Jul 16, 2026

HCAD.L (HSBC MSCI Canada UCITS ETF) and HNSS.L (HSBC Nasdaq Global Semiconductor UCITS ETF) are both exchange-traded funds - HCAD.L is a Global Equities fund tracking the HSBC MSCI Canada UCITS ETF, while HNSS.L is a Semiconductors fund tracking the Nasdaq Global Semiconductor Index. Both are passively managed. Over the past 3 years, HCAD.L returned 21.36%/yr vs 56.55%/yr for HNSS.L. A 0.52 correlation means they provide meaningful diversification when combined. Both charge a 0.35% expense ratio.

Performance

HCAD.L vs. HNSS.L - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in HSBC MSCI Canada UCITS ETF (HCAD.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). The values are adjusted to include any dividend payments, if applicable.

Different Trading Currencies

HCAD.L is traded in USD, while HNSS.L is traded in GBP. To make them comparable, the HNSS.L values have been converted to USD using the latest available exchange rates.

Returns By Period

In the year-to-date period, HCAD.L achieves a 10.17% return, which is significantly lower than HNSS.L's 86.71% return.

HCAD.L

• 1D: 0.03%
• 1M: 0.76%
• 6M: 8.45%
• YTD: 10.17%
• 1Y: 30.52%
• 3Y*: 21.36%
• 5Y*: 12.48%
• 10Y*: 10.99%

HNSS.L

• 1D: 0.00%
• 1M: -6.96%
• 6M: 70.76%
• YTD: 86.71%
• 1Y: 145.99%
• 3Y*: 56.55%
• 5Y*: —
• 10Y*: —

*Multi-year figures are annualized to reflect compound growth (CAGR)

HCAD.L vs. HNSS.L - Yearly Performance Comparison

	2026 (YTD)	2025	2024	2023	2022
HCAD.L HSBC MSCI Canada UCITS ETF	10.17%	36.92%	12.13%	15.13%	-8.24%
HNSS.L HSBC Nasdaq Global Semiconductor UCITS ETF	86.71%	56.48%	17.97%	39.90%	-33.45%

Correlation

The correlation between HCAD.L and HNSS.L is 0.42, which is low. Their price movements are largely independent, making them effective diversification partners.

	Correlation
Correlation (1Y) Calculated over the trailing 1-year period	0.42
Correlation (3Y) Calculated over the trailing 3-year period	0.46
Correlation (All Time) Calculated using the full available price history since Jan 25, 2022	0.52

The correlation between HCAD.L and HNSS.L has been stable across timeframes, ranging from 0.42 to 0.52 - a consistent structural relationship.

Return for Risk

HCAD.L vs. HNSS.L — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

HCAD.L

HCAD.L Risk / Return Rank: 87
HCAD.L Sharpe Ratio Rank: 88
HCAD.L Sortino Ratio Rank: 87
HCAD.L Omega Ratio Rank: 84
HCAD.L Calmar Ratio Rank: 87
HCAD.L Martin Ratio Rank: 88

HNSS.L

HNSS.L Risk / Return Rank: 89
HNSS.L Sharpe Ratio Rank: 92
HNSS.L Sortino Ratio Rank: 87
HNSS.L Omega Ratio Rank: 93
HNSS.L Calmar Ratio Rank: 93
HNSS.L Martin Ratio Rank: 81

The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

HCAD.L vs. HNSS.L - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for HSBC MSCI Canada UCITS ETF (HCAD.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

Values are calculated on a 1-year rolling basis and updated daily. Risk-adjusted metrics are more stable over longer periods — use the period switch above to explore them.

	HCAD.L	HNSS.L	Difference
Sharpe ratio: Return per unit of total volatility	2.29	2.54	-0.25
Sortino ratio: Return per unit of downside risk	3.20	3.15	+0.06
Omega ratio: Gain probability vs. loss probability	1.40	1.50	-0.10
Calmar ratio: Return relative to maximum drawdown	3.97	4.73	-0.76
Martin ratio: Return relative to average drawdown	15.09	12.45	+2.64

HCAD.L vs. HNSS.L - Sharpe Ratio Comparison

The current HCAD.L Sharpe Ratio is 2.29, which is comparable to the HNSS.L Sharpe Ratio of 2.54. The chart below compares the historical Sharpe Ratios of HCAD.L and HNSS.L, calculated using daily returns over the previous 12 months. A higher Sharpe Ratio indicates better risk-adjusted performance relative to the risk-free rate.

Drawdowns

HCAD.L vs. HNSS.L - Drawdown Comparison

The maximum HCAD.L drawdown since its inception was -43.05%, smaller than the maximum HNSS.L drawdown of -51.82%. Use the drawdown chart below to compare losses from any high point for HCAD.L and HNSS.L.

Drawdown Indicators

	HCAD.L	HNSS.L	Difference
Max Drawdown Largest peak-to-trough decline	-43.05%	-51.82%	+8.77%
Max Drawdown (1Y) Largest decline over 1 year	-7.60%	-30.87%	+23.27%
Max Drawdown (3Y) Largest decline over 3 years	-12.72%	-37.48%	+24.76%
Max Drawdown (5Y) Largest decline over 5 years	-24.80%	—	—
Max Drawdown (10Y) Largest decline over 10 years	-41.07%	—	—
Current Drawdown Current decline from peak	0.00%	-12.47%	+12.47%
Average Drawdown Average peak-to-trough decline	-10.56%	-18.91%	+8.35%
Ulcer Index Depth and duration of drawdowns from previous peaks	2.01%	11.73%	-9.72%

Volatility

HCAD.L vs. HNSS.L - Volatility Comparison

The current volatility for HSBC MSCI Canada UCITS ETF (HCAD.L) is 3.93%, while HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) has a volatility of 18.25%. This indicates that HCAD.L experiences smaller price fluctuations and is considered to be less risky than HNSS.L based on this measure. The chart below showcases a comparison of their rolling one-month volatility.

Volatility by Period

	HCAD.L	HNSS.L	Difference
Volatility (1M) Calculated over the trailing 1-month period	3.93%	18.25%	-14.32%
Volatility (6M) Calculated over the trailing 6-month period	9.97%	32.57%	-22.60%
Volatility (1Y) Calculated over the trailing 1-year period	13.20%	57.52%	-44.32%
Volatility (5Y) Calculated over the trailing 5-year period, annualized	17.25%	41.06%	-23.81%
Volatility (10Y) Calculated over the trailing 10-year period, annualized	17.85%	41.06%	-23.21%

HCAD.L vs. HNSS.L - Expense Ratio Comparison

Both HCAD.L and HNSS.L have an expense ratio of 0.35%.

Dividends

HCAD.L vs. HNSS.L - Dividend Comparison

HCAD.L's dividend yield for the trailing twelve months is around 1.39%, while HNSS.L has not paid dividends to shareholders.

Position	TTM	2025	2024	2023	2022	2021	2020	2019	2018	2017	2016	2015
HCAD.L HSBC MSCI Canada UCITS ETF	1.39%	1.49%	2.00%	2.10%	2.01%	1.57%	1.81%	1.91%	2.17%	1.53%	1.77%	2.25%
HNSS.L HSBC Nasdaq Global Semiconductor UCITS ETF	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%	0.00%

Frequently Asked Questions

Can I hold both HCAD.L and HNSS.L in my portfolio?

HCAD.L and HNSS.L have a correlation of 0.42, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

Which ETF is better, HCAD.L or HNSS.L?

Both ETFs have the same 0.35% expense ratio. The better choice depends on whether you care most about return, fees, risk, or income.

Which ETF is cheaper, HCAD.L or HNSS.L?

HCAD.L and HNSS.L have the same expense ratio: 0.35% per year.

What is the main difference between HCAD.L and HNSS.L?

HCAD.L is categorized as Global Equities, while HNSS.L is Semiconductors. HCAD.L tracks HSBC MSCI Canada UCITS ETF, while HNSS.L tracks Nasdaq Global Semiconductor Index.