DRVE.L vs. HNSS.L

Last updated Jun 4, 2026

DRVE.L (Global X Autonomous & Electric Vehicles UCITS ETF USD Accumulating) and HNSS.L (HSBC Nasdaq Global Semiconductor UCITS ETF) are both exchange-traded funds - DRVE.L is a Technology Equities fund tracking the MSCI World/Information Tech NR USD, while HNSS.L is a Semiconductors fund tracking the Nasdaq Global Semiconductor Index. Both are passively managed. Over the past 3 years, DRVE.L returned 22.09%/yr vs 63.64%/yr for HNSS.L. A 0.66 correlation means they provide meaningful diversification when combined. DRVE.L charges 0.50%/yr vs 0.35%/yr for HNSS.L.

Performance

DRVE.L vs. HNSS.L - Performance Comparison

The chart below illustrates the hypothetical performance of a $10,000 investment in Global X Autonomous & Electric Vehicles UCITS ETF USD Accumulating (DRVE.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). The values are adjusted to include any dividend payments, if applicable.

Different Trading Currencies

DRVE.L is traded in USD, while HNSS.L is traded in GBP. To make them comparable, the HNSS.L values have been converted to USD using the latest available exchange rates.

Returns By Period

In the year-to-date period, DRVE.L achieves a 42.61% return, which is significantly lower than HNSS.L's 96.55% return.

DRVE.L

• 1D: -0.78%
• 1M: 12.44%
• YTD: 42.61%
• 6M: 43.87%
• 1Y: 94.06%
• 3Y*: 22.09%
• 5Y*: —
• 10Y*: —

HNSS.L

• 1D: 1.34%
• 1M: 30.19%
• YTD: 96.55%
• 6M: 100.34%
• 1Y: 203.97%
• 3Y*: 63.64%
• 5Y*: —
• 10Y*: —

*Multi-year figures are annualized to reflect compound growth (CAGR)

DRVE.L vs. HNSS.L - Yearly Performance Comparison

	2026 (YTD)	2025	2024	2023	2022
DRVE.L Global X Autonomous & Electric Vehicles UCITS ETF USD Accumulating	42.61%	29.05%	-5.06%	27.62%	-26.86%
HNSS.L HSBC Nasdaq Global Semiconductor UCITS ETF	96.55%	56.48%	17.97%	69.39%	-27.37%

Correlation

The correlation between DRVE.L and HNSS.L is 0.83, indicating a strong positive relationship between their price movements. Combining them offers limited diversification - they tend to fall together during downturns.

	Correlation
Correlation (1Y) Calculated over the trailing 1-year period	0.83
Correlation (3Y) Calculated over the trailing 3-year period	0.72
Correlation (All Time) Calculated using the full available price history since Jan 27, 2022	0.66

The correlation between DRVE.L and HNSS.L shifts across timeframes, from 0.66 (all time) to 0.83 (1 year), reflecting how their relationship changes across market environments.

Return for Risk

DRVE.L vs. HNSS.L — Risk / Return Rank

Compare risk-adjusted metric ranks to identify better-performing investments over the past 12 months.

DRVE.L

DRVE.L Risk / Return Rank: 93
DRVE.L Sharpe Ratio Rank: 95
DRVE.L Sortino Ratio Rank: 93
DRVE.L Omega Ratio Rank: 89
DRVE.L Calmar Ratio Rank: 95
DRVE.L Martin Ratio Rank: 92

HNSS.L

HNSS.L Risk / Return Rank: 97
HNSS.L Sharpe Ratio Rank: 98
HNSS.L Sortino Ratio Rank: 97
HNSS.L Omega Ratio Rank: 96
HNSS.L Calmar Ratio Rank: 98
HNSS.L Martin Ratio Rank: 98

The rank (0–100) shows how this investment's returns compare to the risk taken. Higher = better. Based on the past 12 months of data, combining Sharpe, Sortino, and other metrics used by quantitative funds and institutional investors.

DRVE.L vs. HNSS.L - Risk-Adjusted Trends Comparison

This table presents a comparison of risk-adjusted performance metrics for Global X Autonomous & Electric Vehicles UCITS ETF USD Accumulating (DRVE.L) and HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L). Risk-adjusted metrics are performance indicators that assess an investment's returns in relation to its risk, enabling a more accurate comparison of different investment options.

	DRVE.L	HNSS.L	Difference
Sharpe ratio: Return per unit of total volatility	3.84	6.18	-2.34
Sortino ratio: Return per unit of downside risk	4.69	6.09	-1.40
Omega ratio: Gain probability vs. loss probability	1.57	1.79	-0.21
Calmar ratio: Return relative to maximum drawdown	7.76	13.04	-5.28
Martin ratio: Return relative to average drawdown	23.76	48.24	-24.48
Data is calculated on a 1-year rolling basis and updated daily. The trend shows the change in the indicator over the past month.

DRVE.L vs. HNSS.L - Sharpe Ratio Comparison

The current DRVE.L Sharpe Ratio is 3.84, which is lower than the HNSS.L Sharpe Ratio of 6.18. The chart below compares the historical Sharpe Ratios of DRVE.L and HNSS.L, calculated using daily returns over the previous 12 months. A higher Sharpe Ratio indicates better risk-adjusted performance relative to the risk-free rate.

Sharpe Ratios by Period

	DRVE.L	HNSS.L	Difference
Sharpe Ratio (1Y) Calculated over the trailing 1-year period	3.84	6.18	-2.34
Sharpe Ratio (All Time) Calculated using the full available price history	0.27	1.28	-1.02

Drawdowns

DRVE.L vs. HNSS.L - Drawdown Comparison

The maximum DRVE.L drawdown since its inception was -41.48%, roughly equal to the maximum HNSS.L drawdown of -41.16%. Use the drawdown chart below to compare losses from any high point for DRVE.L and HNSS.L.

Drawdown Indicators

	DRVE.L	HNSS.L	Difference
Max Drawdown Largest peak-to-trough decline	-41.48%	-41.16%	-0.32%
Max Drawdown (1Y) Largest decline over 1 year	-12.05%	-15.53%	+3.48%
Max Drawdown (3Y) Largest decline over 3 years	-33.23%	-37.48%	+4.25%
Current Drawdown Current decline from peak	-0.78%	0.00%	-0.78%
Average Drawdown Average peak-to-trough decline	-20.63%	-11.70%	-8.93%
Ulcer Index Depth and duration of drawdowns from previous peaks	3.94%	4.21%	-0.27%

Volatility

DRVE.L vs. HNSS.L - Volatility Comparison

The current volatility for Global X Autonomous & Electric Vehicles UCITS ETF USD Accumulating (DRVE.L) is 10.57%, while HSBC Nasdaq Global Semiconductor UCITS ETF (HNSS.L) has a volatility of 13.80%. This indicates that DRVE.L experiences smaller price fluctuations and is considered to be less risky than HNSS.L based on this measure. The chart below showcases a comparison of their rolling one-month volatility.

Volatility by Period

	DRVE.L	HNSS.L	Difference
Volatility (1M) Calculated over the trailing 1-month period	10.57%	13.80%	-3.23%
Volatility (6M) Calculated over the trailing 6-month period	18.33%	25.66%	-7.33%
Volatility (1Y) Calculated over the trailing 1-year period	24.39%	32.86%	-8.47%
Volatility (5Y) Calculated over the trailing 5-year period, annualized	35.62%	31.97%	+3.65%
Volatility (10Y) Calculated over the trailing 10-year period, annualized	35.62%	31.97%	+3.65%

DRVE.L vs. HNSS.L - Expense Ratio Comparison

DRVE.L has a 0.50% expense ratio, which is higher than HNSS.L's 0.35% expense ratio.

Dividends

DRVE.L vs. HNSS.L - Dividend Comparison

Neither DRVE.L nor HNSS.L has paid dividends to shareholders.

Tickers have no history of dividend payments

Frequently Asked Questions

Can I hold both DRVE.L and HNSS.L in my portfolio?

DRVE.L and HNSS.L have a correlation of 0.83, meaning they provide meaningful diversification benefit when combined. Depending on your allocation goals, holding both could reduce overall portfolio risk.

Which ETF is better, DRVE.L or HNSS.L?

On fees, HNSS.L is cheaper at 0.35% per year. The better choice depends on whether you care most about return, fees, risk, or income.

Which ETF is cheaper, DRVE.L or HNSS.L?

HNSS.L is cheaper with a 0.35% expense ratio, compared with 0.50% for DRVE.L.

What is the main difference between DRVE.L and HNSS.L?

DRVE.L is categorized as Technology Equities, while HNSS.L is Semiconductors. DRVE.L tracks MSCI World/Information Tech NR USD, while HNSS.L tracks Nasdaq Global Semiconductor Index. They also come from different issuers: Global X and HSBC. Their fees differ too: 0.50% for DRVE.L and 0.35% for HNSS.L.